中文
English
LNG10R180-VB Product details
Back to previous pageProduct introduction：
**
LNG10R180-VB is a single N-channel power MOSFET in TO252 package with high withstand voltage and low on-resistance. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, a turn-on threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 18mΩ at VGS=10V, and a maximum drain current (ID) of up to 45A. It uses advanced trench technology, has efficient current handling capabilities and low switching losses, and is ideal for high-performance power management applications.
**
LNG10R180-VB is a single N-channel power MOSFET in TO252 package with high withstand voltage and low on-resistance. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, a turn-on threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 18mΩ at VGS=10V, and a maximum drain current (ID) of up to 45A. It uses advanced trench technology, has efficient current handling capabilities and low switching losses, and is ideal for high-performance power management applications.
**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**
1. **Package type**: TO252
2. **Device configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Turning point voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology
9. **Thermal resistance**: Based on the thermal characteristics parameters provided in the product documentation
10. **Switching speed**: Suitable for high-frequency switching, the specific parameters depend on the application circuit design
11. **Operating temperature range**: Commonly -55°C to 150°C, please refer to the product specification for details
**
1. **Package type**: TO252
2. **Device configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Turning point voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology
9. **Thermal resistance**: Based on the thermal characteristics parameters provided in the product documentation
10. **Switching speed**: Suitable for high-frequency switching, the specific parameters depend on the application circuit design
11. **Operating temperature range**: Commonly -55°C to 150°C, please refer to the product specification for details
**
Domain and module applications：
**
LNG10R180-VB MOSFET is suitable for a variety of fields that require efficient power conversion and current control. Common application scenarios include:
1. **DC-DC converter**: This MOSFET can be used in buck and boost DC-DC converters, especially in automotive electronics and portable devices, where efficient power management requires low on-resistance to reduce power loss.
2. **Motor drive**: In the control of brushless DC motors (BLDC) and stepper motors, the device can provide reliable drive in high current and voltage applications.
3. **Power management module (PMM)**: In power modules for servers, data centers and high-performance computing equipment, LNG10R180-VB can be used to optimize power distribution and improve overall system efficiency.
4. **Photovoltaic inverter**: In solar power generation systems, MOSFET is used for switching control of the inverter part. The LNG10R180-VB with high-speed switching capability is suitable for handling energy conversion from solar panels.
5. **Battery Management System (BMS)**: Especially in electric vehicles (EV) and energy storage systems, this MOSFET can be used for battery charging and discharging management to ensure safe and efficient operation of battery packs in different voltage ranges.
The versatility and superior electrical performance of this MOSFET make it widely used in these fields.
LNG10R180-VB MOSFET is suitable for a variety of fields that require efficient power conversion and current control. Common application scenarios include:
1. **DC-DC converter**: This MOSFET can be used in buck and boost DC-DC converters, especially in automotive electronics and portable devices, where efficient power management requires low on-resistance to reduce power loss.
2. **Motor drive**: In the control of brushless DC motors (BLDC) and stepper motors, the device can provide reliable drive in high current and voltage applications.
3. **Power management module (PMM)**: In power modules for servers, data centers and high-performance computing equipment, LNG10R180-VB can be used to optimize power distribution and improve overall system efficiency.
4. **Photovoltaic inverter**: In solar power generation systems, MOSFET is used for switching control of the inverter part. The LNG10R180-VB with high-speed switching capability is suitable for handling energy conversion from solar panels.
5. **Battery Management System (BMS)**: Especially in electric vehicles (EV) and energy storage systems, this MOSFET can be used for battery charging and discharging management to ensure safe and efficient operation of battery packs in different voltage ranges.
The versatility and superior electrical performance of this MOSFET make it widely used in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
