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LNG03R031-VB Product details
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LNG03R031-VB MOSFET Product Introduction
LNG03R031-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high efficiency and low power consumption. Its maximum drain-source voltage is 30V, supports a large current of 100A, and has an extremely low on-resistance, ensuring its excellent performance in high-power circuits. Through Trench technology, the device achieves low loss and high efficiency, suitable for a variety of power management and load control fields. Its compact package and high reliability design enable it to perform well in application scenarios with limited space.
LNG03R031-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high efficiency and low power consumption. Its maximum drain-source voltage is 30V, supports a large current of 100A, and has an extremely low on-resistance, ensuring its excellent performance in high-power circuits. Through Trench technology, the device achieves low loss and high efficiency, suitable for a variety of power management and load control fields. Its compact package and high reliability design enable it to perform well in application scenarios with limited space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model:** LNG03R031-VB
- **Package:** TO252
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID):** 100A
- **Technology:** Trench
- **Model:** LNG03R031-VB
- **Package:** TO252
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID):** 100A
- **Technology:** Trench
Domain and module applications：
Applicable fields and application examples of the module
1. **DC-DC converter**: The LNG03R031-VB is well suited for high-efficiency DC-DC converters, especially in applications that require fast switching and high current handling capabilities. Its low on-resistance ensures less power loss, thereby improving the overall efficiency of the system.
2. **Power tools and drive circuits**: The high current carrying capacity of this MOSFET allows it to be easily applied in power tools and motor control circuits. Its low conduction losses help reduce heat generation in the motor under high load, thereby improving the life and reliability of the system.
3. **Consumer electronics power management**: In power management modules for consumer electronics products (such as smartphones, laptops, etc.), the compact package and high efficiency of the LNG03R031-VB make it ideal for scenarios where high current output is required and space is limited.
4. **Automotive electronics and battery management systems**: LNG03R031-VB can also be widely used in automotive electronics, such as battery management systems (BMS) and low-voltage power control modules. Its low resistance and high current capability help improve the battery's charging and discharging efficiency while reducing heat generation to ensure system stability.
In summary, LNG03R031-VB MOSFET is widely used in DC-DC converters, power tools, consumer electronics, automotive electronics and other fields due to its high current carrying capacity, low on-resistance and high efficiency, meeting the needs for efficient power management and load control.
1. **DC-DC converter**: The LNG03R031-VB is well suited for high-efficiency DC-DC converters, especially in applications that require fast switching and high current handling capabilities. Its low on-resistance ensures less power loss, thereby improving the overall efficiency of the system.
2. **Power tools and drive circuits**: The high current carrying capacity of this MOSFET allows it to be easily applied in power tools and motor control circuits. Its low conduction losses help reduce heat generation in the motor under high load, thereby improving the life and reliability of the system.
3. **Consumer electronics power management**: In power management modules for consumer electronics products (such as smartphones, laptops, etc.), the compact package and high efficiency of the LNG03R031-VB make it ideal for scenarios where high current output is required and space is limited.
4. **Automotive electronics and battery management systems**: LNG03R031-VB can also be widely used in automotive electronics, such as battery management systems (BMS) and low-voltage power control modules. Its low resistance and high current capability help improve the battery's charging and discharging efficiency while reducing heat generation to ensure system stability.
In summary, LNG03R031-VB MOSFET is widely used in DC-DC converters, power tools, consumer electronics, automotive electronics and other fields due to its high current carrying capacity, low on-resistance and high efficiency, meeting the needs for efficient power management and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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