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LL3303N-VB Product details
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LL3303N-VB MOSFET Product Introduction
LL3303N-VB is a high-performance single N-channel MOSFET in SOT223 package, suitable for applications in various compact electronic devices. Its maximum drain-source voltage (VDS) is 30V and can withstand up to 7A of continuous current. This MOSFET uses advanced Trench technology and has excellent on-resistance performance. At VGS = 10V, its on-resistance (RDS(ON)) is 19mΩ, making it an excellent performer in low-power and high-efficiency power management applications.
LL3303N-VB is a high-performance single N-channel MOSFET in SOT223 package, suitable for applications in various compact electronic devices. Its maximum drain-source voltage (VDS) is 30V and can withstand up to 7A of continuous current. This MOSFET uses advanced Trench technology and has excellent on-resistance performance. At VGS = 10V, its on-resistance (RDS(ON)) is 19mΩ, making it an excellent performer in low-power and high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameters of LL3303N-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **ID (continuous drain current)**: 7A
- **Technology**: Trench
- **Package**: SOT223
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **ID (continuous drain current)**: 7A
- **Technology**: Trench
Domain and module applications：
Examples of LL3303N-VB applications in different fields and modules
1. **Portable devices**: Due to the small SOT223 package and high efficiency of the LL3303N-VB, it is ideal for power management circuits in portable electronic devices such as smartphones, tablets and wearable devices. This MOSFET can effectively control the power switch and extend the battery life of the device.
2. **LED driver**: In LED lighting applications, the LL3303N-VB can be used as a switching element in the LED driver circuit. Its low on-resistance characteristic can reduce energy loss, thereby improving the efficiency of the lighting system, and is particularly suitable for driving high-brightness LEDs.
3. **Power management**: The LL3303N-VB is also widely used in DC-DC converters, linear regulators and power switches. Its excellent conduction characteristics and high current carrying capacity make it an ideal choice in power modules, which can be used in battery management and power distribution networks.
4. **Automotive Electronics**: In automotive electronics, the LL3303N-VB can be used for applications such as power window controls, light switches, and power seats. Its miniaturization allows it to be effectively integrated into various automotive control modules, improving the overall reliability and performance of the system.
Through these applications, the LL3303N-VB MOSFET provides efficient and reliable solutions in a variety of electronic fields and modules, meeting the stringent performance and power consumption requirements of modern electronic devices.
1. **Portable devices**: Due to the small SOT223 package and high efficiency of the LL3303N-VB, it is ideal for power management circuits in portable electronic devices such as smartphones, tablets and wearable devices. This MOSFET can effectively control the power switch and extend the battery life of the device.
2. **LED driver**: In LED lighting applications, the LL3303N-VB can be used as a switching element in the LED driver circuit. Its low on-resistance characteristic can reduce energy loss, thereby improving the efficiency of the lighting system, and is particularly suitable for driving high-brightness LEDs.
3. **Power management**: The LL3303N-VB is also widely used in DC-DC converters, linear regulators and power switches. Its excellent conduction characteristics and high current carrying capacity make it an ideal choice in power modules, which can be used in battery management and power distribution networks.
4. **Automotive Electronics**: In automotive electronics, the LL3303N-VB can be used for applications such as power window controls, light switches, and power seats. Its miniaturization allows it to be effectively integrated into various automotive control modules, improving the overall reliability and performance of the system.
Through these applications, the LL3303N-VB MOSFET provides efficient and reliable solutions in a variety of electronic fields and modules, meeting the stringent performance and power consumption requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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