LL110-VB Product details
Product introduction:
LL110-VB is a single N-channel MOSFET in a SOT223 package with good performance and reliability. Its maximum drain-source voltage (VDS) is 100V, which is suitable for a variety of medium voltage applications. The maximum gate-source voltage (VGS) is ±20V, allowing operation under a variety of control voltages. The gate threshold voltage (Vth) of LL110-VB is 1.8V, which can be turned on quickly at a lower voltage. The on-resistance (RDS(ON)) is 120mΩ and 100mΩ respectively, which is suitable for VGS of 4.5V and 10V, and can support a maximum drain current (ID) of 5A. With Trench technology, LL110-VB achieves lower conduction losses and is very suitable for applications requiring high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **Package type**: SOT223
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench
- **Total gate charge (Qg)**: 15nC (typical)
- **Switching speed**: Fast
- **Power dissipation (Ptot)**: Max. 30W
- **Thermal resistance (RθJC)**: 50°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications:
1. **Power management system**: LL110-VB can be widely used in switching power supplies, DC-DC converters and other power management circuits. Its low on-resistance helps reduce power loss, thereby improving system efficiency and meeting the needs of high-performance power supplies.
2. **Portable electronic devices**: In smartphones, tablets and other portable devices, this MOSFET can be used in battery management and power conversion modules to ensure that the device achieves a good balance between high efficiency and long battery life.
3. **LED driver power**: LL110-VB can be used as a driver in LED lighting equipment to provide stable current and voltage to meet the high-efficiency requirements of various lighting applications.
4. **Automotive electronic system**: This MOSFET is suitable for power switches and motor control systems in automobiles. It can maintain good working performance under high voltage and high current, improving the overall efficiency and reliability of the car.
5. **Industrial Control and Automation**: In industrial applications, LL110-VB can be used for motor drive, relay control and automation equipment, supporting high current and low loss operation to meet the needs of various industrial control systems.
With its excellent performance and wide range of applications, LL110-VB is an ideal choice, providing efficient and reliable solutions for a variety of modules and fields.
Technical support:
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