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L8113S-VB Product details
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L8113S-VB Product Introduction
The L8113S-VB is a high-efficiency single N-channel MOSFET in a TO-263 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a drain current (ID) of up to 98A, making it very suitable for a variety of power management and switch control applications. The L8113S-VB has an extremely low on-resistance (RDS(ON)), which is 2.7mΩ at a gate-source voltage (VGS) of 4.5V, and drops to 2.4mΩ at a VGS of 10V, which helps to significantly reduce power loss and heat generation, and improve system efficiency. Manufactured using advanced Trench technology, this MOSFET ensures fast switching performance and excellent thermal management capabilities, making it an indispensable component in modern electronic design.
The L8113S-VB is a high-efficiency single N-channel MOSFET in a TO-263 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a drain current (ID) of up to 98A, making it very suitable for a variety of power management and switch control applications. The L8113S-VB has an extremely low on-resistance (RDS(ON)), which is 2.7mΩ at a gate-source voltage (VGS) of 4.5V, and drops to 2.4mΩ at a VGS of 10V, which helps to significantly reduce power loss and heat generation, and improve system efficiency. Manufactured using advanced Trench technology, this MOSFET ensures fast switching performance and excellent thermal management capabilities, making it an indispensable component in modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
L8113S-VB Detailed parameter description
- **Model**: L8113S-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology
- **Model**: L8113S-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
L8113S-VB MOSFET is widely used in multiple fields and modules, including:
1. **Power management**: This MOSFET performs well in switching power supplies (SMPS) and DC-DC converters (DC-DC), which can efficiently manage the transmission of power, reduce energy loss, and improve the overall efficiency of the system.
2. **Electric vehicles**: L8113S-VB is suitable for battery management systems in electric vehicles, which can support high-power charging and discharging control to ensure the safety and reliability of the system.
3. **Motor drive**: In industrial automation and home appliances, L8113S-VB can be used in motor drive circuits to provide reliable switching control for high-power motors and ensure their stability under high load conditions.
4. **Consumer electronics**: This MOSFET is also widely used in power management of portable electronic devices (such as laptops and smartphones) to improve power efficiency and extend the battery life of the device.
5. **LED lighting**: L8113S-VB is suitable for LED driving circuits, providing stable current to ensure consistent brightness and long life of LED lamps.
With its excellent performance and wide range of applications, L8113S-VB MOSFET is an important component in modern low-voltage and high-efficiency electronic design.
L8113S-VB MOSFET is widely used in multiple fields and modules, including:
1. **Power management**: This MOSFET performs well in switching power supplies (SMPS) and DC-DC converters (DC-DC), which can efficiently manage the transmission of power, reduce energy loss, and improve the overall efficiency of the system.
2. **Electric vehicles**: L8113S-VB is suitable for battery management systems in electric vehicles, which can support high-power charging and discharging control to ensure the safety and reliability of the system.
3. **Motor drive**: In industrial automation and home appliances, L8113S-VB can be used in motor drive circuits to provide reliable switching control for high-power motors and ensure their stability under high load conditions.
4. **Consumer electronics**: This MOSFET is also widely used in power management of portable electronic devices (such as laptops and smartphones) to improve power efficiency and extend the battery life of the device.
5. **LED lighting**: L8113S-VB is suitable for LED driving circuits, providing stable current to ensure consistent brightness and long life of LED lamps.
With its excellent performance and wide range of applications, L8113S-VB MOSFET is an important component in modern low-voltage and high-efficiency electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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