L8113L-VB Product details
Product introduction:
**L8113L-VB** is a high-performance single N-channel MOSFET in a TO262 package, designed for high current and high-efficiency applications. The device's **drain-source voltage (VDS)** reaches 30V, making it suitable for medium-voltage power management and switch control applications. The **maximum drain current (ID)** is 150A, enabling it to operate stably under higher load conditions and suitable for a variety of circuits requiring high current output. Its **gate-source voltage (VGS)** range is ±20V, providing flexible drive options. The **threshold voltage (Vth)** is 1.7V, ensuring reliable conduction at low voltage. When **VGS is 10V**, the MOSFET has an **on-resistance (RDS(ON)** of 2mΩ, showing extremely low power consumption and excellent thermal management characteristics, greatly improving the efficiency of the system.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package**: TO262
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON) @ VGS = 4.5V**: 3.24mΩ
- **RDS(ON) @ VGS = 10V**: 2mΩ
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications:
1. **Power management**:
The L8113L-VB is very suitable for power management modules such as **DC-DC converters** and **switching power supplies**. Its high current capability and low on-resistance enable it to effectively handle high-power loads, ensuring high efficiency and stability of the power supply system. It performs particularly well in applications that require precise voltage and current regulation, such as server power supplies and industrial power supplies.
2. **Motor drive**:
This MOSFET can also be applied to **motor drive circuits**, such as DC motor and stepper motor control. Due to its high rated current and low conduction loss, the L8113L-VB is able to provide smooth current output during motor startup and operation, ensuring efficient operation of the motor.
3. **LED lighting**:
In **LED drive** applications, the L8113L-VB can be used as an efficient switching element to control the brightness and on/off state of LED lights. Its extremely low on-resistance helps reduce power consumption, making the entire lighting system more efficient and extending the life of the LED.
4. **Automotive electronics**:
This MOSFET is also suitable for use in **automotive electronics** fields, such as battery management systems and power distribution modules. Its excellent current carrying capacity and reliability enable it to support a variety of electrical devices in the automotive power system, ensuring efficient power distribution and safe use.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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