L620S-VB Product details
Product introduction:
L620S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to 200V, making it suitable for a variety of power management and switching applications. The gate-source voltage (VGS) of L620S-VB can reach ±20V, and the gate threshold voltage (Vth) is 3V, ensuring that the device can be turned on quickly under a variety of operating conditions. When VGS is 10V, the on-resistance (RDS(ON)) of this MOSFET is only 300mΩ. The low on-resistance characteristic enables it to significantly reduce power consumption and heat generation in high current applications, thereby improving the overall efficiency of the system. Using Trench technology, L620S-VB provides excellent thermal performance and reliability, and is an indispensable component in many electronic designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench
- **Total gate charge (Qg)**: 40nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Max 40W
- **Thermal resistance (RθJC)**: 50°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications:
1. **Power converter**: The L620S-VB performs well in switching power supplies (SMPS) and DC-DC converters, providing stable power conversion under high voltage conditions, ensuring efficient operation of the system under different load conditions.
2. **Motor drive**: This MOSFET is suitable for various motor control systems, such as brushless DC motor (BLDC) and stepper motor drives, providing efficient current control for the motor, improving the motor's response speed and operating efficiency.
3. **Industrial automation**: The L620S-VB can be widely used in industrial automation equipment to ensure the stability and reliability of the equipment under high voltage and high current conditions, especially in application scenarios that require fast switching.
4. **Battery management system (BMS)**: This MOSFET is suitable for battery management applications, providing effective charge and discharge control, helping to improve battery efficiency and safety, and extending battery life.
5. **Consumer Electronics**: L620S-VB can be used in power management circuits of various consumer electronic products, such as smart phones, tablets, etc., to ensure the normal operation and high efficiency of the equipment under high load conditions.
With its excellent electrical performance and wide range of applications, L620S-VB plays an important role in modern electronic design, providing designers with reliable and efficient solutions.
Technical support:
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