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L530NS-VB Product details
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Product Introduction: L530NS-VB
L530NS-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for a variety of power management and drive circuits. The gate-source voltage (VGS) of this MOSFET can reach ±20V, ensuring that it can operate stably under a variety of voltage conditions. The gate threshold voltage (Vth) of L530NS-VB is 1.8V, which can turn on quickly and reduce switching losses. When VGS is 10V, the on-resistance (RDS(ON)) of this product is 100mΩ. The extremely low on-resistance can significantly reduce heat loss and improve the overall efficiency of the system. L530NS-VB uses Trench technology, has excellent thermal performance and reliability, and is suitable for a wide range of application scenarios.
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L530NS-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for a variety of power management and drive circuits. The gate-source voltage (VGS) of this MOSFET can reach ±20V, ensuring that it can operate stably under a variety of voltage conditions. The gate threshold voltage (Vth) of L530NS-VB is 1.8V, which can turn on quickly and reduce switching losses. When VGS is 10V, the on-resistance (RDS(ON)) of this product is 100mΩ. The extremely low on-resistance can significantly reduce heat loss and improve the overall efficiency of the system. L530NS-VB uses Trench technology, has excellent thermal performance and reliability, and is suitable for a wide range of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Max 60W
- **Thermal resistance (RθJC)**: 40°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Max 60W
- **Thermal resistance (RθJC)**: 40°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications：
Applications and modules:
1. **Power management**: L530NS-VB is suitable for switching power supplies (SMPS) and DC-DC converters, providing efficient current management in power conversion, which can effectively reduce energy loss and improve system efficiency.
2. **Motor control**: This MOSFET performs well in motor drive applications and is suitable for use in power tools, electric vehicles, and household appliances, etc., ensuring efficient power transmission and control.
3. **LED drive**: L530NS-VB can be widely used in LED lighting systems, providing stable current output, enhancing the brightness and service life of LEDs, especially in high-power LED applications.
4. **Battery management system (BMS)**: In battery charge and discharge management, the low on-resistance characteristics of L530NS-VB make it an ideal choice, helping to improve battery charge and discharge efficiency and safety.
5. **Audio Amplifier**: L530NS-VB is suitable for use in high-performance audio applications, such as power management of audio amplifiers to ensure stable power supply and optimize sound quality performance.
Through its efficient performance and wide range of applications, L530NS-VB has become an important component in modern electronic design, able to meet the needs of different electronic devices for power management and signal control.
1. **Power management**: L530NS-VB is suitable for switching power supplies (SMPS) and DC-DC converters, providing efficient current management in power conversion, which can effectively reduce energy loss and improve system efficiency.
2. **Motor control**: This MOSFET performs well in motor drive applications and is suitable for use in power tools, electric vehicles, and household appliances, etc., ensuring efficient power transmission and control.
3. **LED drive**: L530NS-VB can be widely used in LED lighting systems, providing stable current output, enhancing the brightness and service life of LEDs, especially in high-power LED applications.
4. **Battery management system (BMS)**: In battery charge and discharge management, the low on-resistance characteristics of L530NS-VB make it an ideal choice, helping to improve battery charge and discharge efficiency and safety.
5. **Audio Amplifier**: L530NS-VB is suitable for use in high-performance audio applications, such as power management of audio amplifiers to ensure stable power supply and optimize sound quality performance.
Through its efficient performance and wide range of applications, L530NS-VB has become an important component in modern electronic design, able to meet the needs of different electronic devices for power management and signal control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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