Product introduction：
Product Introduction: L50NH3LL-VB
L50NH3LL-VB is a high-efficiency single N-channel MOSFET in DFN8 (5X6) package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is as high as 30V, which can meet the needs of a variety of electronic devices. The gate-source voltage (VGS) of L50NH3LL-VB can reach ±20V, which is suitable for a variety of drive circuits. Its gate threshold voltage (Vth) is 1.7V, ensuring that it can turn on quickly to reduce switching losses. The on-resistance (RDS(ON)) of this MOSFET is 9mΩ when VGS is 4.5V and 7mΩ when VGS is 10V. This low on-resistance characteristic makes it perform well in high-frequency applications, effectively reducing heat loss and improving system efficiency. L50NH3LL-VB uses Trench technology, which enables it to provide excellent performance in a variety of application scenarios.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: DFN8(5X6)
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Total gate charge (Qg)**: 20nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Maximum 60W
- **Thermal resistance (RθJC)**: 35°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications：
Applications and modules:
1. **Power management**: The L50NH3LL-VB is suitable for switch mode power supplies (SMPS) and DC-DC converters, which can achieve efficient power conversion and improve the performance and stability of the equipment.
2. **Motor control**: Due to its high current handling capability, this MOSFET can be widely used in motor drive circuits such as fans, power tools and electric vehicles, ensuring efficient power transmission and control.
3. **LED drive**: The L50NH3LL-VB is also very suitable for LED lighting systems, which can work stably at high efficiency currents, thereby improving the light output and service life of LEDs.
4. **Battery management system (BMS)**: The low on-resistance of this MOSFET makes it suitable for battery charging and management systems, which can effectively control the battery charging and discharging process and improve battery efficiency and safety.
5. **Audio Amplifier**: In high-performance audio applications, the L50NH3LL-VB can be used in switching power supplies and amplifier circuits to ensure efficient current transfer and optimize sound quality.
The design of the L50NH3LL-VB makes it an ideal choice for modern electronic devices, providing excellent efficiency, reliability and adaptability to a variety of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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