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L3714S-VB Product details
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Product Introduction: L3714S-VB
L3714S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 30V, suitable for efficient operation in low voltage environment. The gate-source voltage (VGS) of this MOSFET can reach ±20V, providing flexible drive options. The gate threshold voltage (Vth) of L3714S-VB is 1.7V, which can be turned on quickly at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 18mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, ensuring low conduction loss and excellent thermal management performance. This design based on Trench technology makes L3714S-VB particularly suitable for high-frequency switching and high-efficiency applications.
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L3714S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 30V, suitable for efficient operation in low voltage environment. The gate-source voltage (VGS) of this MOSFET can reach ±20V, providing flexible drive options. The gate threshold voltage (Vth) of L3714S-VB is 1.7V, which can be turned on quickly at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 18mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, ensuring low conduction loss and excellent thermal management performance. This design based on Trench technology makes L3714S-VB particularly suitable for high-frequency switching and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Total gate charge (Qg)**: 15nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Max. 45W
- **Thermal resistance (RθJC)**: 30°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Total gate charge (Qg)**: 15nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Max. 45W
- **Thermal resistance (RθJC)**: 30°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications：
Applications and modules:
1. **Power management**: The L3714S-VB is ideal for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS) and DC-DC converters, where it can efficiently manage power and improve the overall performance of the system.
2. **Motor drive**: Due to its high current capability, the L3714S-VB excels in motor control and drive circuits, and is suitable for fan drives, power tools and other high-power applications.
3. **LED drive**: This MOSFET can be widely used in LED lighting circuits to ensure efficient current transfer and increase the life of the LED, especially in high-frequency switching situations.
4. **Charger and battery management system (BMS)**: The low on-resistance characteristics of the L3714S-VB make it ideal for battery charging and management systems, ensuring efficient charge and discharge control and improving overall battery performance.
5. **Audio Amplifier**: In audio applications, the L3714S-VB can be used in switching power supplies and amplifier circuits to achieve higher efficiency and better sound quality to meet the needs of high-performance audio equipment.
The design and performance of the L3714S-VB make it an ideal choice for modern electronic applications, providing a perfect balance of reliability and efficiency.
1. **Power management**: The L3714S-VB is ideal for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS) and DC-DC converters, where it can efficiently manage power and improve the overall performance of the system.
2. **Motor drive**: Due to its high current capability, the L3714S-VB excels in motor control and drive circuits, and is suitable for fan drives, power tools and other high-power applications.
3. **LED drive**: This MOSFET can be widely used in LED lighting circuits to ensure efficient current transfer and increase the life of the LED, especially in high-frequency switching situations.
4. **Charger and battery management system (BMS)**: The low on-resistance characteristics of the L3714S-VB make it ideal for battery charging and management systems, ensuring efficient charge and discharge control and improving overall battery performance.
5. **Audio Amplifier**: In audio applications, the L3714S-VB can be used in switching power supplies and amplifier circuits to achieve higher efficiency and better sound quality to meet the needs of high-performance audio equipment.
The design and performance of the L3714S-VB make it an ideal choice for modern electronic applications, providing a perfect balance of reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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