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L3103L-VB Product details
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1. Product Introduction
L3103L-VB is a high-performance single N-channel MOSFET in TO262 package, designed for low-voltage, high-current applications. The device has a drain-source voltage (VDS) of **30V**, which can be used in a variety of power management and switch control applications. Its gate-source voltage (VGS) is rated at **±20V**, and has a gate threshold voltage (Vth) of **1.7V**, ensuring efficient switching at a lower gate voltage. The on-resistance (RDS(ON)) of L3103L-VB is **7mΩ** at **VGS=4.5V** and **4mΩ** at **VGS=10V**, which makes this MOSFET have excellent performance in high-current (up to **90A**) applications. The use of trench technology makes the device very outstanding in efficient switching and low power consumption, suitable for various industrial and consumer electronic products.
L3103L-VB is a high-performance single N-channel MOSFET in TO262 package, designed for low-voltage, high-current applications. The device has a drain-source voltage (VDS) of **30V**, which can be used in a variety of power management and switch control applications. Its gate-source voltage (VGS) is rated at **±20V**, and has a gate threshold voltage (Vth) of **1.7V**, ensuring efficient switching at a lower gate voltage. The on-resistance (RDS(ON)) of L3103L-VB is **7mΩ** at **VGS=4.5V** and **4mΩ** at **VGS=10V**, which makes this MOSFET have excellent performance in high-current (up to **90A**) applications. The use of trench technology makes the device very outstanding in efficient switching and low power consumption, suitable for various industrial and consumer electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
The low RDS(ON) of this MOSFET provides efficient current handling capability, enabling efficient performance in high current and low voltage environments.
- **Package type**: TO262
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
The low RDS(ON) of this MOSFET provides efficient current handling capability, enabling efficient performance in high current and low voltage environments.
Domain and module applications：
III. Application fields and module examples
1. **Power management system**
L3103L-VB can be used for efficient DC-DC converters in power management modules, especially in applications requiring high current output. Its low on-resistance helps reduce energy loss and improve conversion efficiency, and is widely used in consumer electronics and communication equipment.
2. **Motor drive**
This MOSFET is very suitable for motor control modules, such as DC motor drive and stepper motor drive. In applications requiring fast switching and high current, L3103L-VB can effectively provide large current output for efficient drive and control.
3. **LED drive circuit**
In LED lighting applications, L3103L-VB can be used as a switching element to drive high-power LED modules. Its low on-resistance and high current capability ensure that the LED works in an efficient state, improving the overall lighting efficiency.
4. **Consumer Electronics**
This MOSFET can be widely used in power modules of various consumer electronics products, such as battery management systems, portable devices and chargers, providing reliable switching and power management solutions to ensure efficient operation of the equipment.
1. **Power management system**
L3103L-VB can be used for efficient DC-DC converters in power management modules, especially in applications requiring high current output. Its low on-resistance helps reduce energy loss and improve conversion efficiency, and is widely used in consumer electronics and communication equipment.
2. **Motor drive**
This MOSFET is very suitable for motor control modules, such as DC motor drive and stepper motor drive. In applications requiring fast switching and high current, L3103L-VB can effectively provide large current output for efficient drive and control.
3. **LED drive circuit**
In LED lighting applications, L3103L-VB can be used as a switching element to drive high-power LED modules. Its low on-resistance and high current capability ensure that the LED works in an efficient state, improving the overall lighting efficiency.
4. **Consumer Electronics**
This MOSFET can be widely used in power modules of various consumer electronics products, such as battery management systems, portable devices and chargers, providing reliable switching and power management solutions to ensure efficient operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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