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L3102S-VB Product details
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Product Introduction: L3102S-VB
L3102S-VB is a high-efficiency single N-channel MOSFET in TO263 package with excellent conduction performance and switching speed. The device has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) between 0.5V and 1.5V, which is suitable for low-voltage drive. Its on-resistance (RDS(ON)) is only 9mΩ@VGS=2.5V and 6mΩ@VGS=4.5V, and it can handle drain currents up to 85A. This MOSFET uses Trench technology to ensure low conduction losses and efficient thermal management, making it ideal for applications requiring fast switching and high currents.
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L3102S-VB is a high-efficiency single N-channel MOSFET in TO263 package with excellent conduction performance and switching speed. The device has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) between 0.5V and 1.5V, which is suitable for low-voltage drive. Its on-resistance (RDS(ON)) is only 9mΩ@VGS=2.5V and 6mΩ@VGS=4.5V, and it can handle drain currents up to 85A. This MOSFET uses Trench technology to ensure low conduction losses and efficient thermal management, making it ideal for applications requiring fast switching and high currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=2.5V
- 6mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Total gate charge (Qg)**: 25nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Maximum 50W
- **Thermal resistance (RθJC)**: 30°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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- **Package type**: TO263
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=2.5V
- 6mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Total gate charge (Qg)**: 25nC (typical)
- **Switching speed**: Fast switching
- **Power dissipation (Ptot)**: Maximum 50W
- **Thermal resistance (RθJC)**: 30°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications：
Applications and modules:
1. **Low voltage power management**: Due to its low on-resistance and low threshold voltage, the L3102S-VB is ideal for use in low voltage power management applications such as DC-DC converters in mobile devices, tablets, and portable electronics.
2. **Load switch**: In load switch applications that require fast switching and high current handling capabilities, the L3102S-VB can provide reliable performance and is suitable for use in power control modules for consumer electronic devices.
3. **Battery management system**: This MOSFET can be used in lithium-ion batteries and other battery management systems (BMS) to effectively control the battery charging and discharging process and ensure safety and efficiency.
4. **Power amplifier circuit**: In audio amplifiers or other power amplifier circuits, the L3102S-VB provides efficient current handling and stable operating performance, which can improve the energy efficiency of the overall system.
5. **Smart device driver**: In smart home devices and IoT devices that require higher current control, the device can also provide reliable switching performance and low power consumption.
The high performance and diverse application capabilities of the L3102S-VB make it one of the indispensable power MOSFETs in the field of low-voltage, high-current electronic devices.
1. **Low voltage power management**: Due to its low on-resistance and low threshold voltage, the L3102S-VB is ideal for use in low voltage power management applications such as DC-DC converters in mobile devices, tablets, and portable electronics.
2. **Load switch**: In load switch applications that require fast switching and high current handling capabilities, the L3102S-VB can provide reliable performance and is suitable for use in power control modules for consumer electronic devices.
3. **Battery management system**: This MOSFET can be used in lithium-ion batteries and other battery management systems (BMS) to effectively control the battery charging and discharging process and ensure safety and efficiency.
4. **Power amplifier circuit**: In audio amplifiers or other power amplifier circuits, the L3102S-VB provides efficient current handling and stable operating performance, which can improve the energy efficiency of the overall system.
5. **Smart device driver**: In smart home devices and IoT devices that require higher current control, the device can also provide reliable switching performance and low power consumption.
The high performance and diverse application capabilities of the L3102S-VB make it one of the indispensable power MOSFETs in the field of low-voltage, high-current electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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