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L2203N-VB Product details

Product introduction:

1. Product Introduction

L2203N-VB is a single N-channel MOSFET in TO220 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is **30V**, suitable for high-efficiency switching applications such as low-voltage power management and motor control. The device has a gate-source voltage (VGS) rating of **±20V** and a gate threshold voltage (Vth) of **1.7V**, which can be turned on quickly at a lower gate voltage. L2203N-VB has an extremely low on-resistance (RDS(ON)), which is **4mΩ** at **VGS=4.5V** and **3mΩ** at **VGS=10V**. It can support a large current of **120A** and has good conduction performance. The use of trench technology makes this MOSFET perform well in high-efficiency switching and low power consumption, and is suitable for a variety of industrial and consumer power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench

The low RDS(ON) of this device provides efficient current handling capability and is suitable for applications in high current and low voltage environments.

Domain and module applications:

III. Application fields and module examples

1. **Electric vehicle (EV) low-voltage power system**
L2203N-VB can be used in low-voltage power system management modules in electric vehicles, especially in battery management systems (BMS). This MOSFET can effectively manage the battery charging and discharging process to ensure the safety and efficiency of the system.

2. **DC-DC converter**
In DC-DC converters of portable devices or communication devices, L2203N-VB can achieve efficient power conversion. Its low on-resistance helps reduce energy loss, improve the conversion efficiency of the system, and extend the battery life of the device.

3. **Motor drive control**
This MOSFET can be used in motor drive modules that require high current control, such as industrial automation equipment or consumer appliances. Its high current handling capability (120A) ensures efficient and stable driving of DC motors or stepper motors.

4. **Power Management System**
L2203N-VB can be used as a high-efficiency power switch in server power management and data center infrastructure. Its high-speed switching characteristics and low loss capabilities help achieve efficient power distribution and thermal management of the system, improving overall performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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