Product introduction：
1. L1N08LE-VB Product Introduction
L1N08LE-VB is a single N-channel MOSFET in TO220 package, designed for efficient power management and switching applications. Its drain-source voltage (VDS) is up to 100V, the gate-source voltage (VGS) can reach ±20V, the threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 127mΩ @ VGS=10V, and the maximum drain current (ID) is 18A. This MOSFET is based on advanced trench technology, ensuring low conduction losses and excellent efficiency in high-power applications. With its compact package and excellent electrical characteristics, L1N08LE-VB is ideal for a variety of power conversion, load switching and motor control applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
|
127mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of L1N08LE-VB
| Parameters | Specifications |
|---------------------|-------------------------------------------|
| **Package type** | TO220 |
| **Channel configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 127mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 18A |
| **Technology type** | Trench |
| **Operating temperature range** | -55°C to +150°C |
| **Package features** | TO220 package for power applications requiring thermal management |
The L1N08LE-VB combines high efficiency and stability for applications requiring high power handling.
Domain and module applications：
3. Application fields and module examples
**1. Power management: **
L1N08LE-VB is often used in efficient power management circuits, especially DC-DC power converters. It can maintain low conduction losses in high voltage and high current applications, and is suitable for industrial power modules, server power supplies, and consumer electronics power supplies.
**2. Load switch: **
In load switch applications, L1N08LE-VB MOSFET can be used as a control switch to help achieve efficient energy transfer, and is suitable for power switches, protection circuits, and power distribution networks.
**3. Motor drive: **
The device performs well in motor drive and can be used to control small and medium-sized motors, such as motor drives in home appliances, fan motor controls, and industrial motor drive modules.
**4. Automotive electronics: **
Due to its high voltage and high current handling capabilities, L1N08LE-VB is also widely used in automotive electronic systems, and can be used for power management of electric vehicles, lighting control systems, etc.
Through these applications, L1N08LE-VB demonstrates its advantages in high-power power management and switch control, suitable for key module designs in a variety of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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