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L1404S-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
The L1404S-VB is a high-performance single N-channel MOSFET designed in a TO263 package, optimized for high current and low voltage applications. The device has a drain-source voltage (VDS) of **40V**, making it suitable for low-voltage power management and load switching applications. The L1404S-VB has a high gate-source voltage (VGS) rating of **±20V**, providing flexibility for drive design. The gate threshold voltage (Vth) of this MOSFET is **3V**, enabling fast turn-on. Its on-resistance (RDS(ON)) is extremely low, **2.5mΩ** at **4.5V** and **2mΩ** at **10V**, which means that power losses can be significantly reduced under high load conditions, providing a drain current (ID) of up to **150A**. The trench technology used ensures excellent thermal performance and switching efficiency, making it excellent in a variety of power applications.
The L1404S-VB is a high-performance single N-channel MOSFET designed in a TO263 package, optimized for high current and low voltage applications. The device has a drain-source voltage (VDS) of **40V**, making it suitable for low-voltage power management and load switching applications. The L1404S-VB has a high gate-source voltage (VGS) rating of **±20V**, providing flexibility for drive design. The gate threshold voltage (Vth) of this MOSFET is **3V**, enabling fast turn-on. Its on-resistance (RDS(ON)) is extremely low, **2.5mΩ** at **4.5V** and **2mΩ** at **10V**, which means that power losses can be significantly reduced under high load conditions, providing a drain current (ID) of up to **150A**. The trench technology used ensures excellent thermal performance and switching efficiency, making it excellent in a variety of power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench (trench technology)
The low on-resistance of L1404S-VB makes it have very good energy efficiency in high current applications, suitable for various applications requiring efficient power management.
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench (trench technology)
The low on-resistance of L1404S-VB makes it have very good energy efficiency in high current applications, suitable for various applications requiring efficient power management.
Domain and module applications：
III. Applications and module examples
1. **DC-DC converter**
L1404S-VB can be used in high-efficiency DC-DC converters, where low RDS(ON) helps reduce power loss during the conversion process. Suitable for use in portable devices, computer power supplies and power adapters to ensure stable output voltage.
2. **Battery Management System (BMS)**
In battery management systems, this MOSFET can be used as a switch and protection element. Its high current capability and fast response characteristics make it very suitable for effective charge and discharge management of lithium batteries in electric vehicles and energy storage systems.
3. **Motor drive**
L1404S-VB is suitable for motor drive circuits, which can effectively control the current flow direction, thereby achieving precise control of DC motors and stepper motors. Its strong power handling capability makes it widely used in power tools and household appliances.
4. **High-efficiency power switch**
Due to its extremely low on-resistance and high rated current, the L1404S-VB can also be used in various high-efficiency power switch applications, especially in data center and server power management, to improve the efficiency and stability of the overall system by reducing energy loss.
1. **DC-DC converter**
L1404S-VB can be used in high-efficiency DC-DC converters, where low RDS(ON) helps reduce power loss during the conversion process. Suitable for use in portable devices, computer power supplies and power adapters to ensure stable output voltage.
2. **Battery Management System (BMS)**
In battery management systems, this MOSFET can be used as a switch and protection element. Its high current capability and fast response characteristics make it very suitable for effective charge and discharge management of lithium batteries in electric vehicles and energy storage systems.
3. **Motor drive**
L1404S-VB is suitable for motor drive circuits, which can effectively control the current flow direction, thereby achieving precise control of DC motors and stepper motors. Its strong power handling capability makes it widely used in power tools and household appliances.
4. **High-efficiency power switch**
Due to its extremely low on-resistance and high rated current, the L1404S-VB can also be used in various high-efficiency power switch applications, especially in data center and server power management, to improve the efficiency and stability of the overall system by reducing energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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