L1004S-VB Product details
Product introduction:
The L1004S-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and medium-voltage applications. The device has a drain-source voltage (VDS) of 40V and is suitable for a variety of electronic devices and power management systems. Its maximum gate voltage (VGS) is ±20V and its threshold voltage (Vth) is 2.5V, ensuring that it can be turned on at a lower voltage. The on-resistance (RDS(ON)) of the L1004S-VB is 6mΩ at a VGS of 4.5V, and drops to 5mΩ at a VGS of 10V, which means that it has extremely low power loss in the on state. The device has a maximum drain current (ID) of up to 100A, making it suitable for use in power management, DC motor drive and high-efficiency power conversion applications. Based on the design of Trench technology, the L1004S-VB not only has excellent electrical performance, but also ensures good thermal management and reliability.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Device configuration:**
- Configuration: Single N-channel
- Package type: TO263
2. **Electrical parameters:**
- Drain-source voltage (VDS): 40V
- Gate voltage (VGS): ±20V
- Threshold voltage (Vth): 2.5V
3. **On-resistance:**
- RDS(ON) = 6mΩ @ VGS = 4.5V
- RDS(ON) = 5mΩ @ VGS = 10V
4. **Current capability:**
- Maximum drain current (ID): 100A
5. **Technology:**
- Technology type: Trench technology
---
Domain and module applications:
1. **Power management module: **
- L1004S-VB is widely used in power management systems such as switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability make it an ideal choice for high-efficiency power conversion, effectively reducing energy loss and improving conversion efficiency.
2. **DC motor drive: **
- This MOSFET is suitable for DC motor drive applications and can provide stable switching control. With its current capability of up to 100A, L1004S-VB is particularly suitable for driving high-power motors and is widely used in industrial automation and consumer appliances.
3. **LED lighting drive: **
- In LED lighting drive circuits, L1004S-VB can be used to provide efficient power management to ensure stable operation of LED lamps. Its excellent conduction performance and low power loss help to extend the life of LEDs and improve energy efficiency.
4. **High-efficiency inverter:**
- L1004S-VB performs well in inverter applications, suitable for renewable energy systems and uninterruptible power supplies (UPS). Its high current capability and low on-resistance ensure good performance in the requirements of high-efficiency conversion and stable power output.
In summary, L1004S-VB is an indispensable and important device in modern electronic devices and power management systems with its excellent performance and wide application applicability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image