KP8N60F-VB Product details
Product introduction:
KP8N60F-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. The drain-source voltage (VDS) of this MOSFET is as high as 650V, which is suitable for various circuits that require high voltage processing. Its gate-source voltage (VGS) range is ±30V, ensuring stability under harsh conditions. The threshold voltage (Vth) is 3.5V, which enables fast turn-on at an appropriate gate voltage. When VGS is 10V, the on-resistance (RDS(ON)) is 830mΩ, and the maximum drain current (ID) can reach 10A. Based on planar technology, KP8N60F-VB has excellent electrical performance and reliability, and is widely used in switching power supplies, inverters, motor drives and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) @VGS=10V | 830mΩ |
| Maximum drain current (ID) | 10A |
| Technology| Plannar |
Domain and module applications:
1. **Switching Power Supply (SMPS)**
KP8N60F-VB is widely used in switching power supply modules, especially for high voltage and high power conversion circuits. Its high drain-source voltage of up to 650V and low on-resistance can effectively reduce energy loss and improve conversion efficiency during power conversion.
2. **Inverter**
This MOSFET can be used as the main switching element in the inverter to convert DC power to AC power. The high voltage handling capability and reliability of KP8N60F-VB make it an ideal choice for renewable energy systems (such as solar and wind power inverters).
3. **Motor Drive**
KP8N60F-VB is suitable for motor drive applications and can effectively control the start, stop and speed regulation of the motor. Its maximum drain current is 10A, which can meet the drive requirements of small and medium power motors and improve the performance of the motor system.
4. **Lighting control**
In LED lighting and other lighting control systems, KP8N60F-VB can be used to regulate power and provide stable output current. Its excellent conduction performance ensures that the lamp can work normally under various working conditions and prolongs the service life of LED lamps.
The above examples show the various applications of KP8N60F-VB in high-voltage power management and switch control, reflecting its wide applicability and high efficiency in industrial and consumer electronics fields.
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