KMB054N40DB-VB Product details
Product introduction:
KMB054N40DB-VB is a high-performance single N-channel power MOSFET manufactured with advanced Trench technology and packaged in TO252. This device is designed for medium and high voltage applications and has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) limit of ±20V. Its gate threshold voltage (Vth) is 2.5V, ensuring fast turn-on. The KMB054N40DB-VB has a low on-resistance (RDS(ON)) of 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V, and can provide a maximum drain current (ID) of 85A. This series of features makes it excel in power management, drive circuits and other applications requiring high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Breakdown voltage (BVDSS)**: 40V
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Suitable for high frequency applications
- **Power dissipation (Ptot)**: 25W max
- **Thermal resistance (RθJC)**: 62.5°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications:
1. **Switching power supply**: KMB054N40DB-VB is widely used in switching power supplies. Due to its low on-resistance characteristics, it can significantly reduce energy loss when efficiently converting voltage and current, and is suitable for AC-DC and DC-DC converter applications.
2. **Motor drive**: This MOSFET is suitable for motor control circuits and can be used as a switching element to drive the motor, providing high efficiency and fast response. This is especially important in power tools, electric vehicles and industrial automation.
3. **LED driver**: Due to its excellent current control capability, KMB054N40DB-VB is also used in LED drive circuits, which can provide stable current output under low power consumption conditions to ensure efficient operation of LED lighting systems.
4. **Battery management system**: In battery charging and management systems, this MOSFET can be used as a switching element to control charging and discharging currents to ensure battery safety and efficiency.
5. **Communication equipment**: KMB054N40DB-VB is also widely used in power amplifiers and signal modulation modules of communication equipment, which can efficiently process signals and provide reliable power output.
KMB054N40DB-VB has become an important part of high-efficiency solutions in electronic design with its excellent electrical performance and diverse application scenarios.
Technical support:
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