Featured Model

KMB054N40DB-VB Product details

Product introduction:

Product Introduction: KMB054N40DB-VB

KMB054N40DB-VB is a high-performance single N-channel power MOSFET manufactured with advanced Trench technology and packaged in TO252. This device is designed for medium and high voltage applications and has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) limit of ±20V. Its gate threshold voltage (Vth) is 2.5V, ensuring fast turn-on. The KMB054N40DB-VB has a low on-resistance (RDS(ON)) of 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V, and can provide a maximum drain current (ID) of 85A. This series of features makes it excel in power management, drive circuits and other applications requiring high efficiency.

---

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description:

- **Package type**: TO252
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Breakdown voltage (BVDSS)**: 40V
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Suitable for high frequency applications
- **Power dissipation (Ptot)**: 25W max
- **Thermal resistance (RθJC)**: 62.5°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C

---

Domain and module applications:

Applications and modules:

1. **Switching power supply**: KMB054N40DB-VB is widely used in switching power supplies. Due to its low on-resistance characteristics, it can significantly reduce energy loss when efficiently converting voltage and current, and is suitable for AC-DC and DC-DC converter applications.

2. **Motor drive**: This MOSFET is suitable for motor control circuits and can be used as a switching element to drive the motor, providing high efficiency and fast response. This is especially important in power tools, electric vehicles and industrial automation.

3. **LED driver**: Due to its excellent current control capability, KMB054N40DB-VB is also used in LED drive circuits, which can provide stable current output under low power consumption conditions to ensure efficient operation of LED lighting systems.

4. **Battery management system**: In battery charging and management systems, this MOSFET can be used as a switching element to control charging and discharging currents to ensure battery safety and efficiency.

5. **Communication equipment**: KMB054N40DB-VB is also widely used in power amplifiers and signal modulation modules of communication equipment, which can efficiently process signals and provide reliable power output.

KMB054N40DB-VB has become an important part of high-efficiency solutions in electronic design with its excellent electrical performance and diverse application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat