KMA4D5P20X-VB Product details
Product introduction:
**KMA4D5P20X-VB** is a single P-channel MOSFET in a SOT23-6 package, designed for low-voltage applications. Its **drain-source voltage (VDS)** is **-30V**, which can effectively handle switching control tasks in negative voltage applications. The **gate-source voltage (VGS)** of this MOSFET is rated at ±20V, ensuring safe operation under a variety of driving conditions. The **threshold voltage (Vth)** is -1.7V, enabling the device to achieve fast switching at low gate voltages. With its low on-resistance and high current carrying capability, **KMA4D5P20X-VB** is widely used in low-voltage power management, load switching, and battery-powered equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package**: SOT23-6
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON) @ VGS = 4.5V**: 54mΩ
- **RDS(ON) @ VGS = 10V**: 49mΩ
- **Drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications:
1. **Battery Management System (BMS)**:
**KMA4D5P20X-VB** is very suitable for **battery management systems** in battery-powered devices, such as mobile phones, tablets and wearable devices. Its low on-resistance (54mΩ@VGS=4.5V) and high current carrying capacity (-4.8A) enable it to effectively control the battery charging and discharging process, ensuring efficient power management of the device and extending battery life.
2. **Load switch applications**:
The **negative voltage handling capability** (VDS = -30V) of this MOSFET makes it outstanding in **load switch** applications, especially in low-voltage systems that require precise control of power switching, such as power adapters, voltage regulators and charging piles. It can effectively reduce power consumption and improve the overall energy efficiency of the system.
3. **Power management of portable devices**:
**KMA4D5P20X-VB** performs well in **portable devices**, such as smartphones, handheld devices, e-readers, etc. Its compact SOT23-6 package and low on-resistance are suitable for power control circuits in limited space, which can effectively improve the power management efficiency of these devices and extend their battery life.
4. **LED driver**:
This device is also suitable for **LED driver circuits**, especially in small low-voltage LED lighting devices. Its good current control characteristics and high-efficiency conduction capability enable it to ensure stable power supply and high brightness performance of LEDs without increasing system complexity.
In summary, KMA4D5P20X-VB MOSFET demonstrates its excellent performance in low-voltage power management, load switching and portable devices, and is an indispensable component in various modern electronic designs.
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