KMA4D5P20XA-VB Product details
Product introduction:
KMA4D5P20XA-VB is a single P-channel MOSFET in SOT23-6 package, designed for low-voltage applications, with excellent switching performance and efficient conduction characteristics. Its **VDS is -30V**, which can provide reliable current switching capabilities in relatively low-voltage circuits. The device uses advanced trench technology to further reduce the on-resistance, thereby achieving higher efficiency and lower heat loss. The **VGS rating of the MOSFET is ±20V** and the gate threshold voltage is **-1.7V**, making it suitable for driving at relatively low control voltages. The device has a maximum drain current (ID) of **-4.8A** and has low on-resistance characteristics of **54mΩ@VGS=4.5V** and **49mΩ@VGS=10V**, respectively, which can provide stable performance under various load conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT23-6
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench (trench technology)
This MOSFET has an extremely low on-resistance, which can effectively reduce power loss when the load current is large, and the use of Trench technology enables it to have excellent performance in high-speed switching applications.
Domain and module applications:
1. **Battery Management Systems (BMS)**
KMA4D5P20XA-VB can be used for charging and discharging management of lithium batteries, especially for scenarios that require miniaturization and efficient power management, such as mobile devices, smart watches and power tools. Its low on-resistance and high current capability enable it to effectively control the current in the battery protection circuit to ensure the safety and reliability of the system.
2. **DC-DC converter**
In low-power DC-DC converters, this MOSFET can reduce energy loss during the conversion process through low RDS(ON) and high-efficiency switching capabilities. This makes it suitable for portable electronic devices such as mobile phones, tablets or wireless charging devices.
3. **Low-voltage subsystems of electric vehicles**
In low-voltage subsystems of electric vehicles, such as entertainment systems, lighting or auxiliary systems, this MOSFET can be used in low-voltage drive circuits to achieve efficient power switching and reduce space and energy consumption.
4. **Load switch**
KMA4D5P20XA-VB can also be used as a load switch in consumer electronics products, such as power control modules for laptops or desktop computers. In this case, it manages power distribution by controlling the load switch, thereby extending the battery life of the device.
Technical support:
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