KIA830S-VB Product details
Product introduction:
KIA830S-VB is a high-performance single N-channel power MOSFET manufactured using Plannar technology and packaged in TO252. This device is designed for high-voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) limit of ±30V. Its gate threshold voltage (Vth) is 3.5V, ensuring that the device can be turned on quickly at the appropriate gate voltage. The on-resistance (RDS(ON)) of KIA830S-VB is 2750mΩ @ VGS=4.5V and 2200mΩ @ VGS=10V, and it can provide a maximum drain current (ID) of 4A. These features make it widely applicable in power conversion, lighting control and other high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Breakdown voltage (BVDSS)**: 650V
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Suitable for medium frequency applications
- **Power dissipation (Ptot)**: 15W max
- **Thermal resistance (RθJC)**: 62.5°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C
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Domain and module applications:
1. **Switching power supply**: KIA830S-VB is very suitable for switching power supply design, which can efficiently handle high voltage and low power, and is suitable for use in AC-DC converters and DC-DC converters. Its low on-resistance helps to reduce switching losses and improve the efficiency of power conversion.
2. **LED driver**: Due to its good current control ability, KIA830S-VB is widely used in LED drivers. It can stably provide current under high voltage conditions, making LED lighting systems more efficient and reliable when working.
3. **Battery management system**: In battery charging and management systems, KIA830S-VB can be used as a switching element to help control the charging current to ensure battery safety and charging efficiency. It can withstand high voltage and is suitable for management of various battery types.
4. **Household appliances**: In the control module of household appliances, this MOSFET can be used as a load switch and is widely used in the switch control of various electrical equipment, such as refrigerators, washing machines and air conditioners.
5. **Industrial automation**: KIA830S-VB is also suitable for industrial automation equipment to control motors and other loads through its high voltage handling capability to ensure the stability and reliability of the system.
In summary, KIA830S-VB is a versatile and high-efficiency power MOSFET that is suitable for a variety of high-voltage and low-power applications, providing an effective solution for power management and equipment control.
Technical support:
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