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KIA830S-VB Product details

Product introduction:

Product Introduction: KIA830S-VB

KIA830S-VB is a high-performance single N-channel power MOSFET manufactured using Plannar technology and packaged in TO252. This device is designed for high-voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) limit of ±30V. Its gate threshold voltage (Vth) is 3.5V, ensuring that the device can be turned on quickly at the appropriate gate voltage. The on-resistance (RDS(ON)) of KIA830S-VB is 2750mΩ @ VGS=4.5V and 2200mΩ @ VGS=10V, and it can provide a maximum drain current (ID) of 4A. These features make it widely applicable in power conversion, lighting control and other high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 4A 2200mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description:

- **Package type**: TO252
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Breakdown voltage (BVDSS)**: 650V
- **Total gate charge (Qg)**: 30nC (typical)
- **Switching speed**: Suitable for medium frequency applications
- **Power dissipation (Ptot)**: 15W max
- **Thermal resistance (RθJC)**: 62.5°C/W
- **Junction temperature range (Tj)**: -55°C to 150°C

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Domain and module applications:

Applications and modules:

1. **Switching power supply**: KIA830S-VB is very suitable for switching power supply design, which can efficiently handle high voltage and low power, and is suitable for use in AC-DC converters and DC-DC converters. Its low on-resistance helps to reduce switching losses and improve the efficiency of power conversion.

2. **LED driver**: Due to its good current control ability, KIA830S-VB is widely used in LED drivers. It can stably provide current under high voltage conditions, making LED lighting systems more efficient and reliable when working.

3. **Battery management system**: In battery charging and management systems, KIA830S-VB can be used as a switching element to help control the charging current to ensure battery safety and charging efficiency. It can withstand high voltage and is suitable for management of various battery types.

4. **Household appliances**: In the control module of household appliances, this MOSFET can be used as a load switch and is widely used in the switch control of various electrical equipment, such as refrigerators, washing machines and air conditioners.

5. **Industrial automation**: KIA830S-VB is also suitable for industrial automation equipment to control motors and other loads through its high voltage handling capability to ensure the stability and reliability of the system.

In summary, KIA830S-VB is a versatile and high-efficiency power MOSFET that is suitable for a variety of high-voltage and low-power applications, providing an effective solution for power management and equipment control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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