KIA8205A-VB Product details
Product introduction:
KIA8205A-VB is a high-performance dual-channel N-type MOSFET in a compact TSSOP8 package, designed for applications that require high efficiency and miniaturization. Its unique trench technology enables it to have low on-resistance and good thermal performance during operation, making it suitable for high-frequency and high-efficiency switching power supply applications. The drain-source voltage (VDS) of this MOSFET can reach up to 20V, and the maximum drain current (ID) can reach 6.6A, which can meet a variety of power management needs. In addition, the threshold voltage (Vth) range of KIA8205A-VB is 0.5V to 1.5V, which enables it to work reliably in low-voltage environments and is widely used in portable electronic devices and other low-voltage power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
- **Package type**: TSSOP8
- **Channel configuration**: Common source N+N type dual channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology type**: Trench technology (Trench)
- **Power loss (Ptot)**: Depends on working conditions and heat dissipation design
- **Operating temperature range**: -55°C to 150°C
- **Quiescent Current (IDSS)**: Low leakage current ensures high efficiency
Domain and module applications:
1. **Portable Electronic Devices**
The low on-resistance and miniaturized design of KIA8205A-VB make it very suitable for use in power management modules of smartphones, tablets and other portable electronic devices. It can effectively improve energy conversion efficiency, extend battery life, and ensure stable operation of devices under low voltage conditions.
2. **DC-DC Converter**
This MOSFET can be widely used in low-voltage DC-DC step-down converters and is suitable for power conversion modules of power tools, digital cameras and other consumer electronic products. With its low RDS(ON) value, KIA8205A-VB can reduce energy loss and achieve higher conversion efficiency.
3. **Battery Protection Circuit**
KIA8205A-VB also plays an important role in lithium battery management systems. Its high current handling capability and low on-resistance ensure that the battery charging and discharging process is safe and effective, and is widely used in scenarios that require battery protection, such as mobile power supplies and electric vehicles.
4. **Load switch control**
This MOSFET is suitable for load switch control and can efficiently drive various loads. It is commonly used in home appliances, industrial control systems, and other applications that require stable switching currents to help achieve efficient power management.
In summary, KIA8205A-VB is an ideal choice for a variety of power management and switching applications with its excellent electrical performance and adaptability.
Technical support:
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