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KIA7N60U-VB Product details
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1. KIA7N60U-VB Product Introduction
KIA7N60U-VB is a single N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 650V, suitable for handling high-voltage circuit requirements. The gate-source voltage (VGS) of this MOSFET can withstand ±30V, ensuring stability in harsh environments. Its threshold voltage (Vth) is 3.5V, which can ensure reliable switching action. When VGS is 10V, the on-resistance (RDS(ON)) is 1100mΩ and the drain current (ID) can reach a maximum of 7A. Based on planar technology, KIA7N60U-VB provides good voltage tolerance and reliable conduction performance, suitable for high-voltage power management and switching circuits.
KIA7N60U-VB is a single N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 650V, suitable for handling high-voltage circuit requirements. The gate-source voltage (VGS) of this MOSFET can withstand ±30V, ensuring stability in harsh environments. Its threshold voltage (Vth) is 3.5V, which can ensure reliable switching action. When VGS is 10V, the on-resistance (RDS(ON)) is 1100mΩ and the drain current (ID) can reach a maximum of 7A. Based on planar technology, KIA7N60U-VB provides good voltage tolerance and reliable conduction performance, suitable for high-voltage power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. KIA7N60U-VB Detailed parameter description
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) @VGS=10V | 1100mΩ |
| Maximum drain current (ID) | 7A |
| Technology| Plannar |
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) @VGS=10V | 1100mΩ |
| Maximum drain current (ID) | 7A |
| Technology| Plannar |
Domain and module applications：
3. KIA7N60U-VB Application Fields and Module Examples
1. **High-voltage Power Management**
With its high drain-source voltage of 650V and reliable conduction performance, KIA7N60U-VB is very suitable for use in high-voltage power management modules. Such applications usually need to handle high-voltage inputs and have high requirements for device reliability and voltage resistance. This MOSFET is capable of such tasks.
2. **Industrial Inverter**
In industrial inverters, KIA7N60U-VB can be used in DC to AC conversion circuits. Its high voltage carrying capacity makes it suitable for systems that need to handle high-voltage DC, helping to improve the efficiency and durability of the inverter.
3. **Power Adapter**
Due to its high voltage capability of 650V, KIA7N60U-VB is particularly suitable for power adapters that require high-voltage conversion. Its low drain current and moderate on-resistance ensure that it has low losses during the power conversion process, thereby improving the overall conversion efficiency.
4. **Switching Power Supply (SMPS)**
KIA7N60U-VB can also be used in switching power supply systems, especially those that need to handle high voltage and medium current. Its reliable conduction performance can reduce energy loss in the switching circuit, thereby improving the energy efficiency of the system.
These application scenarios show the diverse applications of KIA7N60U-VB in the field of high voltage and power management, especially in situations requiring high voltage tolerance and stable performance.
1. **High-voltage Power Management**
With its high drain-source voltage of 650V and reliable conduction performance, KIA7N60U-VB is very suitable for use in high-voltage power management modules. Such applications usually need to handle high-voltage inputs and have high requirements for device reliability and voltage resistance. This MOSFET is capable of such tasks.
2. **Industrial Inverter**
In industrial inverters, KIA7N60U-VB can be used in DC to AC conversion circuits. Its high voltage carrying capacity makes it suitable for systems that need to handle high-voltage DC, helping to improve the efficiency and durability of the inverter.
3. **Power Adapter**
Due to its high voltage capability of 650V, KIA7N60U-VB is particularly suitable for power adapters that require high-voltage conversion. Its low drain current and moderate on-resistance ensure that it has low losses during the power conversion process, thereby improving the overall conversion efficiency.
4. **Switching Power Supply (SMPS)**
KIA7N60U-VB can also be used in switching power supply systems, especially those that need to handle high voltage and medium current. Its reliable conduction performance can reduce energy loss in the switching circuit, thereby improving the energy efficiency of the system.
These application scenarios show the diverse applications of KIA7N60U-VB in the field of high voltage and power management, especially in situations requiring high voltage tolerance and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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