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KIA65R190-VB Product details
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Product Introduction - KIA65R190-VB
KIA65R190-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and medium current applications. With a drain-source voltage (VDS) of 650V, the device can withstand high voltage working environments and is suitable for power management and switching circuits. The maximum gate voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V, which has strong adaptability. When VGS is 10V, the on-resistance (RDS(ON)) is 160mΩ, ensuring low conduction losses and thus improving overall efficiency. The maximum drain current (ID) is 20A, making the KIA65R190-VB an excellent performer in power conversion and control systems, especially in situations where high voltage and high efficiency are required.
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KIA65R190-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and medium current applications. With a drain-source voltage (VDS) of 650V, the device can withstand high voltage working environments and is suitable for power management and switching circuits. The maximum gate voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V, which has strong adaptability. When VGS is 10V, the on-resistance (RDS(ON)) is 160mΩ, ensuring low conduction losses and thus improving overall efficiency. The maximum drain current (ID) is 20A, making the KIA65R190-VB an excellent performer in power conversion and control systems, especially in situations where high voltage and high efficiency are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Device configuration:**
- Configuration: Single N-channel
- Package type: TO220F
2. **Electrical parameters:**
- Drain-source voltage (VDS): 650V
- Gate voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
3. **On-resistance:**
- RDS(ON)= 160mΩ @ VGS=10V
4. **Current capability:**
- Maximum drain current (ID): 20A
5. **Technology:**
- Technology type: SJ_Multi-EPI
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1. **Device configuration:**
- Configuration: Single N-channel
- Package type: TO220F
2. **Electrical parameters:**
- Drain-source voltage (VDS): 650V
- Gate voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
3. **On-resistance:**
- RDS(ON)= 160mΩ @ VGS=10V
4. **Current capability:**
- Maximum drain current (ID): 20A
5. **Technology:**
- Technology type: SJ_Multi-EPI
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Domain and module applications：
Applications and module examples
1. **High-voltage power management: **
- KIA65R190-VB is widely used in high-voltage power management modules, which can effectively handle high-voltage input and provide stable output voltage, and is suitable for various power adapters and DC-DC converters.
2. **Industrial control: **
- In industrial automation and control systems, this MOSFET can be used as a high-voltage switch to help control the start and stop of motors and other high-power devices, and achieve efficient power management and control.
3. **Lighting system: **
- KIA65R190-VB can be used in high-voltage LED drive circuits, which can safely and efficiently control the switching of LEDs, ensure their stable operation under high voltage, and improve the efficiency and reliability of lighting systems.
4. **Inverter: **
- In solar inverters and power converters, KIA65R190-VB can be used as a power switching element to achieve efficient power conversion and management, and support the efficient operation of renewable energy systems.
With its excellent electrical performance and wide application applicability, KIA65R190-VB plays an important role in the field of high-voltage and high-efficiency power management.
1. **High-voltage power management: **
- KIA65R190-VB is widely used in high-voltage power management modules, which can effectively handle high-voltage input and provide stable output voltage, and is suitable for various power adapters and DC-DC converters.
2. **Industrial control: **
- In industrial automation and control systems, this MOSFET can be used as a high-voltage switch to help control the start and stop of motors and other high-power devices, and achieve efficient power management and control.
3. **Lighting system: **
- KIA65R190-VB can be used in high-voltage LED drive circuits, which can safely and efficiently control the switching of LEDs, ensure their stable operation under high voltage, and improve the efficiency and reliability of lighting systems.
4. **Inverter: **
- In solar inverters and power converters, KIA65R190-VB can be used as a power switching element to achieve efficient power conversion and management, and support the efficient operation of renewable energy systems.
With its excellent electrical performance and wide application applicability, KIA65R190-VB plays an important role in the field of high-voltage and high-efficiency power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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