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KIA5610-VB Product details

Product introduction:

Product Introduction: KIA5610-VB

KIA5610-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced Trench technology and packaged in SOT89. This MOSFET performs well in high-voltage applications, with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.8V, ensuring rapid turn-on at low voltage. The on-resistance (RDS(ON)) of KIA5610-VB is 102mΩ at VGS=10V and 125mΩ at VGS=4.5V, showing good conduction performance and low power consumption. This product is widely used in power management, switching power supplies, and consumer electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 100V 1.8V 4.2A 102mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 100V 1.8V 4.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 100V 1.8V 4.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
Detailed parameter description:

- **Package type**: SOT89
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.2A
- **Technology**: Trench technology
- **Breakdown voltage (BVDSS)**: 100V
- **Junction temperature range (Tj)**: -55°C to 150°C
- **Total gate charge (Qg)**: 15nC (typical)
- **Switching speed**: Suitable for high frequency applications
- **Power dissipation (Ptot)**: 25W max
- **Thermal resistance (RθJC)**: 50°C/W

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Domain and module applications:

Applications and modules:

1. **Power Management**: KIA5610-VB is very effective in power management modules, especially in DC-DC converter and load switch applications. Its low on-resistance and good switching characteristics help achieve efficient power conversion, reduce power consumption, and improve overall system efficiency.

2. **Switching Power Supply (SMPS)**: This MOSFET is capable of handling high voltages and providing stable currents, making it suitable for use in switching power supply designs. Its excellent on-state performance enables it to reduce heat losses in converters, thereby improving power supply reliability and efficiency.

3. **Consumer Electronics**: KIA5610-VB is an ideal choice for efficient power management in a variety of consumer electronics products, including smartphones, tablets, and other portable devices. Its compact SOT89 package is suitable for space-constrained applications while providing reliable current carrying capabilities.

4. **LED driver**: KIA5610-VB is also suitable for LED driver circuits. Its high current capability can effectively drive high-power LEDs and is widely used in LED lighting and display screens. Its low on-resistance ensures that the heat generated during the driving process is minimized, thereby improving the performance and service life of the LED.

Through the above application examples, KIA5610-VB shows its wide applicability in multiple fields, especially in low to medium voltage applications that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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