KIA5610-VB Product details
Product introduction:
KIA5610-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced Trench technology and packaged in SOT89. This MOSFET performs well in high-voltage applications, with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.8V, ensuring rapid turn-on at low voltage. The on-resistance (RDS(ON)) of KIA5610-VB is 102mΩ at VGS=10V and 125mΩ at VGS=4.5V, showing good conduction performance and low power consumption. This product is widely used in power management, switching power supplies, and consumer electronics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Package type**: SOT89
- **Channel configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.2A
- **Technology**: Trench technology
- **Breakdown voltage (BVDSS)**: 100V
- **Junction temperature range (Tj)**: -55°C to 150°C
- **Total gate charge (Qg)**: 15nC (typical)
- **Switching speed**: Suitable for high frequency applications
- **Power dissipation (Ptot)**: 25W max
- **Thermal resistance (RθJC)**: 50°C/W
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Domain and module applications:
1. **Power Management**: KIA5610-VB is very effective in power management modules, especially in DC-DC converter and load switch applications. Its low on-resistance and good switching characteristics help achieve efficient power conversion, reduce power consumption, and improve overall system efficiency.
2. **Switching Power Supply (SMPS)**: This MOSFET is capable of handling high voltages and providing stable currents, making it suitable for use in switching power supply designs. Its excellent on-state performance enables it to reduce heat losses in converters, thereby improving power supply reliability and efficiency.
3. **Consumer Electronics**: KIA5610-VB is an ideal choice for efficient power management in a variety of consumer electronics products, including smartphones, tablets, and other portable devices. Its compact SOT89 package is suitable for space-constrained applications while providing reliable current carrying capabilities.
4. **LED driver**: KIA5610-VB is also suitable for LED driver circuits. Its high current capability can effectively drive high-power LEDs and is widely used in LED lighting and display screens. Its low on-resistance ensures that the heat generated during the driving process is minimized, thereby improving the performance and service life of the LED.
Through the above application examples, KIA5610-VB shows its wide applicability in multiple fields, especially in low to medium voltage applications that require high efficiency and reliability.
Technical support:
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