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KIA50N03-VB Product details
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1. KIA50N03-VB Product Introduction
KIA50N03-VB is a high-efficiency single N-channel MOSFET designed with TO252 package, optimized for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum drain current (ID) reaches 80A, which is suitable for use in various high-power applications. Its gate-source voltage range is ±20V, and the enable threshold voltage (Vth) is 1.7V, ensuring effective conduction at low gate voltage. The on-resistance (RDS(ON)) of KIA50N03-VB performs well at different gate voltages, which are 6mΩ@VGS=4.5V and 5mΩ@VGS=10V, respectively, providing extremely low conduction loss and efficient energy transfer. This MOSFET adopts advanced Trench technology and is suitable for application scenarios with high requirements for efficiency and thermal management.
KIA50N03-VB is a high-efficiency single N-channel MOSFET designed with TO252 package, optimized for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum drain current (ID) reaches 80A, which is suitable for use in various high-power applications. Its gate-source voltage range is ±20V, and the enable threshold voltage (Vth) is 1.7V, ensuring effective conduction at low gate voltage. The on-resistance (RDS(ON)) of KIA50N03-VB performs well at different gate voltages, which are 6mΩ@VGS=4.5V and 5mΩ@VGS=10V, respectively, providing extremely low conduction loss and efficient energy transfer. This MOSFET adopts advanced Trench technology and is suitable for application scenarios with high requirements for efficiency and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. KIA50N03-VB Detailed parameter description
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID):** 80A
- **Technology:** Trench
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID):** 80A
- **Technology:** Trench
Domain and module applications：
3. Application fields and module examples
1. **Switching power supply (SMPS): **
KIA50N03-VB is suitable for use in switching power supply design, especially in situations where high efficiency and low power consumption are required. Due to its low on-resistance, this MOSFET can effectively reduce switching losses and improve the overall power conversion efficiency, and is suitable for power modules of various electronic devices.
2. **Motor drive: **
In DC motor and stepper motor drive applications, KIA50N03-VB can be used as an efficient switching element to control the start, run and stop of the motor. Its high drain current capability enables it to support high-power motor drives and meet the high current requirements of motor control systems.
3. **Battery management system: **
KIA50N03-VB can also be used in battery management systems as a load switch and charging control element. Its low on-resistance and high efficiency enable it to perform well during battery charging and discharging, ensuring the safety and efficient operation of the battery, and is suitable for various electric vehicles and renewable energy storage systems.
1. **Switching power supply (SMPS): **
KIA50N03-VB is suitable for use in switching power supply design, especially in situations where high efficiency and low power consumption are required. Due to its low on-resistance, this MOSFET can effectively reduce switching losses and improve the overall power conversion efficiency, and is suitable for power modules of various electronic devices.
2. **Motor drive: **
In DC motor and stepper motor drive applications, KIA50N03-VB can be used as an efficient switching element to control the start, run and stop of the motor. Its high drain current capability enables it to support high-power motor drives and meet the high current requirements of motor control systems.
3. **Battery management system: **
KIA50N03-VB can also be used in battery management systems as a load switch and charging control element. Its low on-resistance and high efficiency enable it to perform well during battery charging and discharging, ensuring the safety and efficient operation of the battery, and is suitable for various electric vehicles and renewable energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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