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KIA50N03A-VB TO252 Product details
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1. KIA50N03A-VB Product Introduction
KIA50N03A-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and high-efficiency applications. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) can withstand ±20V, ensuring its stable operation under a variety of voltage conditions. Its threshold voltage (Vth) is 1.7V, and it can turn on quickly even at a lower gate voltage. The on-resistance (RDS(ON)) of KIA50N03A-VB is 6mΩ at VGS of 4.5V, and it drops to 5mΩ at VGS of 10V, and the maximum drain current can reach 80A. Based on trench technology, this MOSFET has extremely low conduction loss and high efficiency, making it very suitable for various power supplies and switching circuits.
KIA50N03A-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and high-efficiency applications. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) can withstand ±20V, ensuring its stable operation under a variety of voltage conditions. Its threshold voltage (Vth) is 1.7V, and it can turn on quickly even at a lower gate voltage. The on-resistance (RDS(ON)) of KIA50N03A-VB is 6mΩ at VGS of 4.5V, and it drops to 5mΩ at VGS of 10V, and the maximum drain current can reach 80A. Based on trench technology, this MOSFET has extremely low conduction loss and high efficiency, making it very suitable for various power supplies and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. KIA50N03A-VB Detailed parameter description
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) @VGS=4.5V | 6mΩ |
| On-resistance (RDS(ON)) @VGS=10V | 5mΩ |
| Maximum drain current (ID) | 80A |
| Technology| Trench |
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) @VGS=4.5V | 6mΩ |
| On-resistance (RDS(ON)) @VGS=10V | 5mΩ |
| Maximum drain current (ID) | 80A |
| Technology| Trench |
Domain and module applications：
3. KIA50N03A-VB Application Fields and Module Examples
1. **DC-DC Converter**
KIA50N03A-VB is very suitable for high-efficiency DC-DC converters due to its high current carrying capacity and low on-resistance. These devices usually require high-efficiency switching elements to reduce energy loss, and KIA50N03A-VB can effectively improve conversion efficiency.
2. **Power Management System**
In the power management system, this MOSFET can be used as a load switch and power control to help manage power distribution. Its fast switching capability and low heat dissipation characteristics make it an ideal choice in power supply design, which can optimize power utilization.
3. **Motor Drive**
KIA50N03A-VB is also suitable for motor drive applications, especially in DC motors that require high current. The MOSFET can respond quickly and provide stable current, thereby achieving precise motor control and improving system efficiency.
4. **High-frequency switching circuit**
In high-frequency switching circuits, this MOSFET can be used in applications such as switching power supplies and lighting systems. Its low on-resistance enables it to effectively reduce switching losses and improve the overall performance and reliability of the system.
These application scenarios demonstrate the high performance and wide applicability of the KIA50N03A-VB, especially in electronic designs that require high current and low loss.
1. **DC-DC Converter**
KIA50N03A-VB is very suitable for high-efficiency DC-DC converters due to its high current carrying capacity and low on-resistance. These devices usually require high-efficiency switching elements to reduce energy loss, and KIA50N03A-VB can effectively improve conversion efficiency.
2. **Power Management System**
In the power management system, this MOSFET can be used as a load switch and power control to help manage power distribution. Its fast switching capability and low heat dissipation characteristics make it an ideal choice in power supply design, which can optimize power utilization.
3. **Motor Drive**
KIA50N03A-VB is also suitable for motor drive applications, especially in DC motors that require high current. The MOSFET can respond quickly and provide stable current, thereby achieving precise motor control and improving system efficiency.
4. **High-frequency switching circuit**
In high-frequency switching circuits, this MOSFET can be used in applications such as switching power supplies and lighting systems. Its low on-resistance enables it to effectively reduce switching losses and improve the overall performance and reliability of the system.
These application scenarios demonstrate the high performance and wide applicability of the KIA50N03A-VB, especially in electronic designs that require high current and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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