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KIA4N60H-VB TO251 Product details
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KIA4N60H-VB MOSFET Product Introduction:
KIA4N60H-VB is a high-voltage N-channel MOSFET designed for power management and high-frequency switching applications. This product adopts TO251 package, which is suitable for high-power and high-voltage environments. It has a drain-source voltage (VDS) capability of 650V, ensuring that it can handle high voltage requirements in industrial applications. The continuous leakage current (ID) of the MOSFET is 4A, which is suitable for medium-power applications. The gate threshold voltage (Vth) is 3.5V, which ensures that it can be effectively turned on at a lower gate drive voltage. RDS(ON) is 2200mΩ at VGS = 10V, ensuring reasonable conduction losses, allowing it to operate stably under high voltage and high current conditions.
KIA4N60H-VB is a high-voltage N-channel MOSFET designed for power management and high-frequency switching applications. This product adopts TO251 package, which is suitable for high-power and high-voltage environments. It has a drain-source voltage (VDS) capability of 650V, ensuring that it can handle high voltage requirements in industrial applications. The continuous leakage current (ID) of the MOSFET is 4A, which is suitable for medium-power applications. The gate threshold voltage (Vth) is 3.5V, which ensures that it can be effectively turned on at a lower gate drive voltage. RDS(ON) is 2200mΩ at VGS = 10V, ensuring reasonable conduction losses, allowing it to operate stably under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameters of KIA4N60H-VB:
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2200mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 4A
- **Technology**: Plannar
- **Application areas**: power conversion, inverter, switching power supply, industrial control
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2200mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 4A
- **Technology**: Plannar
- **Application areas**: power conversion, inverter, switching power supply, industrial control
Domain and module applications：
Application examples of KIA4N60H-VB in different fields and modules:
1. **Power conversion**: In power adapters and switching power supply modules, KIA4N60H-VB can efficiently perform power conversion due to its high voltage capability of 650V and low on-resistance, ensuring stable operation of equipment under different load conditions.
2. **Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, the high voltage and medium current characteristics of this MOSFET make it suitable for efficient power conversion, helping to achieve energy management of solar energy and battery energy storage systems.
3. **Industrial control**: In automation equipment and industrial control systems, KIA4N60H-VB can be used as a switching element to control motors, relays and other loads, meeting the needs of high voltage and high reliability, ensuring stable operation of the system.
4. **Lighting control**: In high-voltage lighting systems, KIA4N60H-VB can be used to control the switching of high-power lamps, providing reliable switching performance, while its package design makes it easy to apply on compact circuit boards.
By applying KIA4N60H-VB in these fields, designers and engineers can achieve efficient power management, reduce system energy consumption, and optimize equipment performance.
1. **Power conversion**: In power adapters and switching power supply modules, KIA4N60H-VB can efficiently perform power conversion due to its high voltage capability of 650V and low on-resistance, ensuring stable operation of equipment under different load conditions.
2. **Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, the high voltage and medium current characteristics of this MOSFET make it suitable for efficient power conversion, helping to achieve energy management of solar energy and battery energy storage systems.
3. **Industrial control**: In automation equipment and industrial control systems, KIA4N60H-VB can be used as a switching element to control motors, relays and other loads, meeting the needs of high voltage and high reliability, ensuring stable operation of the system.
4. **Lighting control**: In high-voltage lighting systems, KIA4N60H-VB can be used to control the switching of high-power lamps, providing reliable switching performance, while its package design makes it easy to apply on compact circuit boards.
By applying KIA4N60H-VB in these fields, designers and engineers can achieve efficient power management, reduce system energy consumption, and optimize equipment performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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