KIA2N60H-VB TO220F Product details
Product introduction:
KIA2N60H-VB is a high-voltage single N-channel MOSFET in a TO220F package with excellent power handling capability and thermal performance. The drain-source voltage (VDS) of this MOSFET is as high as 650V, making it suitable for use in high-voltage applications. Its gate-source voltage (VGS) can withstand ±30V, ensuring stability under a variety of operating conditions. The threshold voltage (Vth) of the KIA2N60H-VB is 3.5V, and it has a relatively low on-resistance (RDS(ON) is 1700mΩ@VGS=10V), which can support a maximum drain current of 2A with low loss. Based on planar technology, this MOSFET performs well in high-voltage and high-frequency applications, and is very suitable for the design of power conversion and switching circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter| Value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) @VGS=10V | 1700mΩ |
| Maximum drain current (ID) | 2A |
| Technology| Plannar |
Domain and module applications:
1. **High-voltage power supply**
KIA2N60H-VB is very suitable for switch mode power supply (SMPS) and high-voltage power supply modules due to its high drain-source voltage of 650V. These applications require devices to handle high voltage and high power, and the performance characteristics of KIA2N60H-VB enable it to operate efficiently and stably in such applications.
2. **Motor drive control**
This MOSFET is also suitable for motor drive control circuits, especially in situations where high voltage and lower current are required. For example, KIA2N60H-VB can be used as a drive switch for DC motors to help achieve precise speed control and efficient use of electrical energy.
3. **Lighting system**
In LED lighting and other lighting systems, KIA2N60H-VB can be used as a switching element to help achieve dimming and switching functions. This high-voltage MOSFET can ensure stable operation under different power supply conditions and improve the overall reliability of the system.
4. **Welding equipment**
In resistance welding and laser welding equipment, KIA2N60H-VB can be used as the main switching element to provide reliable current control and efficient energy transmission. Due to its high voltage resistance, it can withstand the instantaneous high current generated during the welding process.
These application scenarios fully demonstrate the high performance and wide applicability of KIA2N60H-VB, especially in electronic designs that require high voltage and reliability.
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