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KIA24N50H-VB Product details

Product introduction:

Product Introduction: KIA24N50H-VB

KIA24N50H-VB is an N-channel power MOSFET with high voltage withstand capability, manufactured using advanced Super Junction technology and Multi-EPI process. The product is packaged in TO220F, with a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) limit of ±30V, suitable for high-voltage and high-current applications. Its rated on-resistance (RDS(ON)) is 150mΩ, and when VGS=10V, the maximum continuous current is 20A. With its low on-resistance and high switching efficiency, KIA24N50H-VB is very suitable for applications that require high efficiency and stability, such as switching power supplies (SMPS), high-voltage inverters, and motor drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 3.5V 20A 150mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description:

- **Package type**: TO220F
- **Channel configuration**: Single channel N-channel MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 150mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Super Junction (SJ) Multi-Epi (Multi-EPI)
- **Breakdown voltage (BVDSS)**: 600V
- **Junction temperature range (Tj)**: -55°C to 150°C
- **Total gate charge (Qg)**: 78nC (typ.)
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
- **Power dissipation (Ptot)**: Max. 120W
- **Thermal resistance (RθJC)**: 1°C/W

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Domain and module applications:

Applications and modules:

1. **Switching Power Supply (SMPS)**: KIA24N50H-VB is suitable for the main switch in the switching power supply due to its high withstand voltage and low on-resistance, ensuring efficient conversion in high-frequency switching environments. Its low gate charge characteristics make it particularly suitable for use in high-efficiency power converters such as server power supplies and industrial power supplies.

2. **High Voltage Inverter**: In the inverter, the 600V withstand voltage characteristics of this MOSFET enable it to handle large voltage fluctuations from AC power or photovoltaic cells. The multiple epitaxial structure reduces conduction losses and improves the overall energy efficiency of the inverter, making it suitable for inverter modules in solar power generation systems and electric vehicles.

3. **Motor Drive**: The high current carrying capacity and switching efficiency of KIA24N50H-VB make it a good application prospect in motor control. Especially in industrial automation, fan drives and home appliances, it can optimize the power efficiency of motor drives and reduce heat losses.

4. **UPS (Uninterruptible Power Supply) System**: For UPS systems, KIA24N50H-VB can quickly respond to voltage jumps and provide stable current support. Its high voltage and current handling capabilities can ensure continuous and stable power output during power switching.

Through these application examples, it can be seen that KIA24N50H-VB performs well in a variety of high-voltage and high-power applications, especially for industrial and consumer electronic devices that require reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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