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KIA100N03-VB Product details
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KIA100N03-VB MOSFET Product Introduction
KIA100N03-VB is a unipolar N-channel MOSFET using Trench technology, designed for low voltage and high current applications. The device is packaged in a TO-252 package and has excellent conductivity and low on-resistance, making it particularly suitable for efficient current switching applications. The drain-source voltage (VDS) of KIA100N03-VB is 30V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The device has a continuous leakage current (ID) of up to 100A, which is suitable for high current and high frequency switching operations, and is ideal for power management and low voltage circuit applications.
KIA100N03-VB is a unipolar N-channel MOSFET using Trench technology, designed for low voltage and high current applications. The device is packaged in a TO-252 package and has excellent conductivity and low on-resistance, making it particularly suitable for efficient current switching applications. The drain-source voltage (VDS) of KIA100N03-VB is 30V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The device has a continuous leakage current (ID) of up to 100A, which is suitable for high current and high frequency switching operations, and is ideal for power management and low voltage circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252, suitable for applications with limited space and good heat dissipation.
- **Configuration**: Unipolar N-channel, suitable for current switching and control applications.
- **Drain-source voltage (VDS)**: 30V, suitable for low-voltage power management and drive applications.
- **Gate-source voltage (VGS)**: ±20V, ensuring its reliable operation under high gate drive voltage.
- **Threshold voltage (Vth)**: 1.7V, ensuring reliable turn-on even under low gate drive voltage.
- **On-resistance (RDS(ON))**: 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, with ultra-low on-resistance, suitable for efficient current transmission.
- **Continuous leakage current (ID)**: 100A, suitable for high current density application scenarios.
- **Technology**: Trench, providing low on-resistance and efficient power handling capabilities.
- **Package**: TO-252, suitable for applications with limited space and good heat dissipation.
- **Configuration**: Unipolar N-channel, suitable for current switching and control applications.
- **Drain-source voltage (VDS)**: 30V, suitable for low-voltage power management and drive applications.
- **Gate-source voltage (VGS)**: ±20V, ensuring its reliable operation under high gate drive voltage.
- **Threshold voltage (Vth)**: 1.7V, ensuring reliable turn-on even under low gate drive voltage.
- **On-resistance (RDS(ON))**: 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, with ultra-low on-resistance, suitable for efficient current transmission.
- **Continuous leakage current (ID)**: 100A, suitable for high current density application scenarios.
- **Technology**: Trench, providing low on-resistance and efficient power handling capabilities.
Domain and module applications：
Applications and Modules
1. **Low Voltage Power Management**:
The KIA100N03-VB MOSFET is ideal for applications such as low voltage power converters, DC-DC converters, and voltage regulators. In these applications, the MOSFET is able to handle high current loads while its low on-resistance ensures maximum energy efficiency. Its 30V drain-source voltage is suitable for the management of 12V or 24V power systems.
2. **Power Tools and Small Motor Drives**:
With its support for up to 100A of drain current, the KIA100N03-VB MOSFET can be used to drive small power tools, brushless DC motors (BLDC), and other small motors. In these applications, the MOSFET is able to provide efficient switching performance to ensure power stability during motor startup and operation.
3. **Battery Protection Circuits**:
The MOSFET performs well in battery management systems (BMS), especially for low voltage and high current lithium-ion battery protection circuits. It can effectively control high current charge and discharge, ensuring the safety and life of the battery.
4. **Automotive Electronics**:
KIA100N03-VB is suitable for low voltage applications in automotive electronics, such as automotive lighting control, fan motor drive and other low voltage power distribution modules. Its high current capability and low on-resistance make it very suitable for power and control applications in automotive 12V or 24V systems.
1. **Low Voltage Power Management**:
The KIA100N03-VB MOSFET is ideal for applications such as low voltage power converters, DC-DC converters, and voltage regulators. In these applications, the MOSFET is able to handle high current loads while its low on-resistance ensures maximum energy efficiency. Its 30V drain-source voltage is suitable for the management of 12V or 24V power systems.
2. **Power Tools and Small Motor Drives**:
With its support for up to 100A of drain current, the KIA100N03-VB MOSFET can be used to drive small power tools, brushless DC motors (BLDC), and other small motors. In these applications, the MOSFET is able to provide efficient switching performance to ensure power stability during motor startup and operation.
3. **Battery Protection Circuits**:
The MOSFET performs well in battery management systems (BMS), especially for low voltage and high current lithium-ion battery protection circuits. It can effectively control high current charge and discharge, ensuring the safety and life of the battery.
4. **Automotive Electronics**:
KIA100N03-VB is suitable for low voltage applications in automotive electronics, such as automotive lighting control, fan motor drive and other low voltage power distribution modules. Its high current capability and low on-resistance make it very suitable for power and control applications in automotive 12V or 24V systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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