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KHB9D5N20F-VB Product details
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KHB9D5N20F-VB MOSFET Product Introduction
KHB9D5N20F-VB is a high-efficiency unipolar N-channel power MOSFET designed for medium and low voltage switching applications. Its maximum drain-source voltage (VDS) is 200V, suitable for operation in medium voltage environments, and is widely used in various power management and drive circuits. The gate-source voltage (VGS) rating of the device is ±20V, ensuring stability under different operating conditions. Its threshold voltage (Vth) is 3V, enabling it to respond quickly to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 265mΩ, which reduces conduction losses and helps improve energy efficiency. The maximum continuous drain current (ID) is 10A, and it is manufactured using trench technology, providing excellent switching performance and high efficiency.
KHB9D5N20F-VB is a high-efficiency unipolar N-channel power MOSFET designed for medium and low voltage switching applications. Its maximum drain-source voltage (VDS) is 200V, suitable for operation in medium voltage environments, and is widely used in various power management and drive circuits. The gate-source voltage (VGS) rating of the device is ±20V, ensuring stability under different operating conditions. Its threshold voltage (Vth) is 3V, enabling it to respond quickly to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 265mΩ, which reduces conduction losses and helps improve energy efficiency. The maximum continuous drain current (ID) is 10A, and it is manufactured using trench technology, providing excellent switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- The TO220F package design provides good heat dissipation, suitable for use in high-power applications, and can effectively isolate electrical connections.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel structure makes this MOSFET suitable for a variety of switching and amplification circuits, simple and easy to use.
3. **VDS (drain-source voltage)**: 200V
- The drain-source voltage rating of this MOSFET is 200V, which is suitable for medium-voltage applications and can meet a variety of power supply design requirements.
4. **VGS (gate-source voltage)**: ±20V
- The VGS rating is ±20V, which ensures the stable operation of the device during voltage fluctuations and increases design flexibility.
5. **Vth (threshold voltage)**: 3V
- The threshold voltage is 3V, which ensures that the MOSFET can respond to signals quickly and is suitable for logic control circuits.
6. **RDS(ON) (on-resistance)**: 265mΩ @ VGS=10V
- The low on-resistance reduces conduction losses and improves overall energy efficiency, making it suitable for high-efficiency switching power supplies.
7. **ID (continuous leakage current)**: 10A
- The maximum continuous leakage current of this device is 10A, which can meet medium current requirements and is suitable for a variety of application scenarios.
8. **Technology**: Trench technology
- Trench technology provides low on-resistance and high switching speed, making this MOSFET perform well in high-frequency switching applications.
1. **Package**: TO220F
- The TO220F package design provides good heat dissipation, suitable for use in high-power applications, and can effectively isolate electrical connections.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel structure makes this MOSFET suitable for a variety of switching and amplification circuits, simple and easy to use.
3. **VDS (drain-source voltage)**: 200V
- The drain-source voltage rating of this MOSFET is 200V, which is suitable for medium-voltage applications and can meet a variety of power supply design requirements.
4. **VGS (gate-source voltage)**: ±20V
- The VGS rating is ±20V, which ensures the stable operation of the device during voltage fluctuations and increases design flexibility.
5. **Vth (threshold voltage)**: 3V
- The threshold voltage is 3V, which ensures that the MOSFET can respond to signals quickly and is suitable for logic control circuits.
6. **RDS(ON) (on-resistance)**: 265mΩ @ VGS=10V
- The low on-resistance reduces conduction losses and improves overall energy efficiency, making it suitable for high-efficiency switching power supplies.
7. **ID (continuous leakage current)**: 10A
- The maximum continuous leakage current of this device is 10A, which can meet medium current requirements and is suitable for a variety of application scenarios.
8. **Technology**: Trench technology
- Trench technology provides low on-resistance and high switching speed, making this MOSFET perform well in high-frequency switching applications.
Domain and module applications：
Application Examples
1. **Switching Power Supply (SMPS)**:
KHB9D5N20F-VB MOSFET is widely used in switching power supply design, especially in adapters and power modules. As a high-efficiency switching device, it can maintain good efficiency and thermal performance under high-frequency operation.
2. **Motor Drive**:
This MOSFET is suitable for motor drive applications, such as motor control of home appliances and industrial equipment. It can effectively control the start and stop and speed regulation of the motor to ensure smooth operation.
3. **LED Lighting**:
In LED lighting systems, KHB9D5N20F-VB MOSFET can be used as a switch for high-voltage LED drive, ensuring reliable current control and long life.
4. **Power Converter**:
This MOSFET is suitable for use in small power converters, working as a switching element under high efficiency and high stability requirements, providing excellent power solutions.
5. **Battery Management System**:
KHB9D5N20F-VB can be used in battery management systems to control battery charging and discharging to ensure system safety and high efficiency.
KHB9D5N20F-VB MOSFET is designed to provide efficient and reliable switching solutions for a variety of power supplies and drive circuits, playing an important role in modern electronic devices.
1. **Switching Power Supply (SMPS)**:
KHB9D5N20F-VB MOSFET is widely used in switching power supply design, especially in adapters and power modules. As a high-efficiency switching device, it can maintain good efficiency and thermal performance under high-frequency operation.
2. **Motor Drive**:
This MOSFET is suitable for motor drive applications, such as motor control of home appliances and industrial equipment. It can effectively control the start and stop and speed regulation of the motor to ensure smooth operation.
3. **LED Lighting**:
In LED lighting systems, KHB9D5N20F-VB MOSFET can be used as a switch for high-voltage LED drive, ensuring reliable current control and long life.
4. **Power Converter**:
This MOSFET is suitable for use in small power converters, working as a switching element under high efficiency and high stability requirements, providing excellent power solutions.
5. **Battery Management System**:
KHB9D5N20F-VB can be used in battery management systems to control battery charging and discharging to ensure system safety and high efficiency.
KHB9D5N20F-VB MOSFET is designed to provide efficient and reliable switching solutions for a variety of power supplies and drive circuits, playing an important role in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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