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KHB9D5N20F1-VB Product details
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KHB9D5N20F1-VB MOSFET Product Introduction:
KHB9D5N20F1-VB is a high-efficiency unipolar N-channel MOSFET designed for low-voltage applications and is packaged in TO220F. The drain-source voltage (VDS) rating of this MOSFET is 200V, which is suitable for a variety of medium and low voltage power management and switching applications. Its gate-source voltage (VGS) rating is ±20V, ensuring stability and safety under a variety of operating conditions. The threshold voltage (Vth) of KHB9D5N20F1-VB is 3V, allowing smooth conduction at lower gate voltages. Under VGS=10V conditions, the on-resistance (RDS(ON)) is 265mΩ, providing excellent conductive performance, thereby reducing energy losses. Its rated leakage current (ID) is 10A, making it suitable for a variety of medium-power applications. This MOSFET uses trench technology (Trench), which improves the efficiency and heat dissipation of the device and is suitable for high-frequency switching applications.
KHB9D5N20F1-VB is a high-efficiency unipolar N-channel MOSFET designed for low-voltage applications and is packaged in TO220F. The drain-source voltage (VDS) rating of this MOSFET is 200V, which is suitable for a variety of medium and low voltage power management and switching applications. Its gate-source voltage (VGS) rating is ±20V, ensuring stability and safety under a variety of operating conditions. The threshold voltage (Vth) of KHB9D5N20F1-VB is 3V, allowing smooth conduction at lower gate voltages. Under VGS=10V conditions, the on-resistance (RDS(ON)) is 265mΩ, providing excellent conductive performance, thereby reducing energy losses. Its rated leakage current (ID) is 10A, making it suitable for a variety of medium-power applications. This MOSFET uses trench technology (Trench), which improves the efficiency and heat dissipation of the device and is suitable for high-frequency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameters of KHB9D5N20F1-VB:
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (drain-source on-resistance)**: 265mΩ @ VGS=10V
- **ID (continuous leakage current)**: 10A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (drain-source on-resistance)**: 265mΩ @ VGS=10V
- **ID (continuous leakage current)**: 10A
- **Technology**: Trench technology
Domain and module applications：
Application examples of KHB9D5N20F1-VB MOSFET:
1. **DC-DC Converter**: KHB9D5N20F1-VB is ideal for DC-DC converter design, which is widely used in power management and power adapters. With its 200V voltage capability and 10A current capability, this MOSFET can effectively filter and manage current during the conversion process, thereby improving power efficiency.
2. **Motor Drive Control**: This MOSFET can be used in motor drive applications such as motor control in power tools and household appliances. With its low on-resistance and high current capability, KHB9D5N20F1-VB can provide a stable current, thereby achieving efficient operation of the motor.
3. **LED Drive**: KHB9D5N20F1-VB is suitable for LED drive circuits, which are widely used in lighting solutions. Due to its good conductive properties, it can provide a stable drive current to the LED, ensuring the brightness and energy efficiency of the LED lighting.
4. **Power Management System**: In consumer electronics and industrial control systems, KHB9D5N20F1-VB can be used in power management modules to optimize current distribution and control. Its good thermal performance and low energy consumption make it an ideal choice for high-efficiency power management solutions.
1. **DC-DC Converter**: KHB9D5N20F1-VB is ideal for DC-DC converter design, which is widely used in power management and power adapters. With its 200V voltage capability and 10A current capability, this MOSFET can effectively filter and manage current during the conversion process, thereby improving power efficiency.
2. **Motor Drive Control**: This MOSFET can be used in motor drive applications such as motor control in power tools and household appliances. With its low on-resistance and high current capability, KHB9D5N20F1-VB can provide a stable current, thereby achieving efficient operation of the motor.
3. **LED Drive**: KHB9D5N20F1-VB is suitable for LED drive circuits, which are widely used in lighting solutions. Due to its good conductive properties, it can provide a stable drive current to the LED, ensuring the brightness and energy efficiency of the LED lighting.
4. **Power Management System**: In consumer electronics and industrial control systems, KHB9D5N20F1-VB can be used in power management modules to optimize current distribution and control. Its good thermal performance and low energy consumption make it an ideal choice for high-efficiency power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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