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KHB9D0N90F1-VB Product details
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Product Introduction
KHB9D0N90F1-VB is a high-performance single N-channel MOSFET in a TO220F package with excellent heat dissipation and electrical characteristics. The device has a drain-source voltage (VDS) of up to 900V, which enables it to perform well in high-voltage applications, and a gate voltage rating of ±30V (VGS), providing users with a safe and reliable operating range. Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 770mΩ at VGS=10V, and the maximum continuous drain current (ID) is 7A. KHB9D0N90F1-VB uses SJ_Multi-EPI technology to ensure its high efficiency and stability in power conversion and control applications, and is widely used in various power management and drive modules.
KHB9D0N90F1-VB is a high-performance single N-channel MOSFET in a TO220F package with excellent heat dissipation and electrical characteristics. The device has a drain-source voltage (VDS) of up to 900V, which enables it to perform well in high-voltage applications, and a gate voltage rating of ±30V (VGS), providing users with a safe and reliable operating range. Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 770mΩ at VGS=10V, and the maximum continuous drain current (ID) is 7A. KHB9D0N90F1-VB uses SJ_Multi-EPI technology to ensure its high efficiency and stability in power conversion and control applications, and is widely used in various power management and drive modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed explanation of product parameters
1. **Package type**: TO220F, designed for high-power applications, easy to use with a heat sink to improve heat dissipation efficiency.
2. **Drain-source voltage (VDS)**: 900V, suitable for high-voltage applications such as switching power supplies, inverters and motor drives.
3. **Gate voltage (VGS)**: ±30V, providing a safe operating range to ensure that the device has good anti-breakdown capabilities during operation.
4. **Turn-on threshold voltage (Vth)**: 3.5V, controls the on state of MOSFET, and can meet the needs of different circuits.
5. **On-resistance (RDS(ON))**: 770mΩ@VGS=10V, the lower on-resistance enables it to effectively reduce power consumption and improve efficiency, suitable for high-frequency switching applications.
6. **Drain current (ID)**: 7A, suitable for medium-current switch control applications, ensuring the stability of MOSFET in a variety of applications.
7. **Technology Type**: SJ_Multi-EPI, using multiple substrate technology to provide excellent electrical performance and thermal management capabilities.
1. **Package type**: TO220F, designed for high-power applications, easy to use with a heat sink to improve heat dissipation efficiency.
2. **Drain-source voltage (VDS)**: 900V, suitable for high-voltage applications such as switching power supplies, inverters and motor drives.
3. **Gate voltage (VGS)**: ±30V, providing a safe operating range to ensure that the device has good anti-breakdown capabilities during operation.
4. **Turn-on threshold voltage (Vth)**: 3.5V, controls the on state of MOSFET, and can meet the needs of different circuits.
5. **On-resistance (RDS(ON))**: 770mΩ@VGS=10V, the lower on-resistance enables it to effectively reduce power consumption and improve efficiency, suitable for high-frequency switching applications.
6. **Drain current (ID)**: 7A, suitable for medium-current switch control applications, ensuring the stability of MOSFET in a variety of applications.
7. **Technology Type**: SJ_Multi-EPI, using multiple substrate technology to provide excellent electrical performance and thermal management capabilities.
Domain and module applications：
Application fields and modules
1. **Switching power supply (SMPS)**: KHB9D0N90F1-VB is widely used in high-voltage switching power supply design. It can achieve efficient power conversion under 900V working conditions. It is suitable for various adapters and power modules to ensure the efficiency and stability of the power supply.
2. **Inverter**: In photovoltaic inverters and other types of inverters, this device can achieve high-voltage switching, which is suitable for applications that convert DC to AC, ensuring the efficient operation of the inverter. It is widely used in renewable energy systems and electric vehicle charging piles.
3. **Motor drive**: KHB9D0N90F1-VB can be used as a switching element in the motor control system, supporting medium current motor drive applications, suitable for motor control in industrial automation, home appliances and power tools, and providing reliable performance.
4. **LED driver power supply**: This MOSFET is suitable for high-power LED lighting systems, providing stable current output, ensuring the reliability and long life of LED modules, and is widely used in commercial and industrial lighting.
5. **UPS power supply (uninterruptible power supply)**: KHB9D0N90F1-VB is suitable for uninterruptible power supply systems, which can provide fast switching and stable power output to ensure the normal operation of key equipment in the event of power failure. It is suitable for data protection and emergency power supply.
1. **Switching power supply (SMPS)**: KHB9D0N90F1-VB is widely used in high-voltage switching power supply design. It can achieve efficient power conversion under 900V working conditions. It is suitable for various adapters and power modules to ensure the efficiency and stability of the power supply.
2. **Inverter**: In photovoltaic inverters and other types of inverters, this device can achieve high-voltage switching, which is suitable for applications that convert DC to AC, ensuring the efficient operation of the inverter. It is widely used in renewable energy systems and electric vehicle charging piles.
3. **Motor drive**: KHB9D0N90F1-VB can be used as a switching element in the motor control system, supporting medium current motor drive applications, suitable for motor control in industrial automation, home appliances and power tools, and providing reliable performance.
4. **LED driver power supply**: This MOSFET is suitable for high-power LED lighting systems, providing stable current output, ensuring the reliability and long life of LED modules, and is widely used in commercial and industrial lighting.
5. **UPS power supply (uninterruptible power supply)**: KHB9D0N90F1-VB is suitable for uninterruptible power supply systems, which can provide fast switching and stable power output to ensure the normal operation of key equipment in the event of power failure. It is suitable for data protection and emergency power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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