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KHB9D0N50P1_07-VB Product details

Product introduction:

Product Introduction:
KHB9D0N50P1_07-VB is a high-efficiency unipolar N-channel power MOSFET in TO220 package, designed for 500V high-voltage applications. The device has a gate-source voltage (VGS) range of ±30V and a turn-on voltage (Vth) of 3.1V, ensuring its excellent switching performance. The KHB9D0N50P1_07-VB has an on-resistance (RDS(ON)) of 660mΩ and performs well at a drain current (ID) of 13A. Manufactured using planar technology, this MOSFET has significant advantages in thermal management and reliability, making it suitable for a variety of high-power and high-frequency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.1V 13A 660mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.1V
- **On-resistance (RDS(ON))**: 660mΩ @ VGS = 10V
- **Drain current (ID)**: 13A
- **Technology**: Planar
- **Gate charge (Qg)**: Medium, suitable for high-frequency switching applications
- **Thermal resistance (Rth)**: Designed for good heat dissipation to adapt to high-power and high-frequency operation.

Domain and module applications:

Application fields and modules:
KHB9D0N50P1_07-VB MOSFET can be widely used in the following fields and modules:

1. **Switching Power Supply (SMPS)**: KHB9D0N50P1_07-VB is an ideal choice for high-voltage switching power supplies, capable of handling 500V and with low conduction losses. It is widely used in industrial power supplies and power electronic equipment to improve the energy efficiency of the overall system.

2. **LED Driver**: Due to its excellent current handling capability and low on-resistance, this MOSFET is suitable for LED drive circuits, especially in high-power and dimming applications, and can provide stable current output to ensure the brightness and life of the LED.

3. **Motor Driver**: KHB9D0N50P1_07-VB performs well in various motor drive applications, including DC motor and stepper motor control, and is particularly suitable for industrial automation, robotics and other fields, and can achieve precise motion control.

4. **Power adapter**: In power adapters and chargers, this MOSFET can be used as a switching element to control the charging process, improve charging efficiency, reduce power consumption, and ensure the stability and safety of the equipment.

5. **Inverter**: KHB9D0N50P1_07-VB is suitable for solar inverters and other inverter power sources. It works efficiently under high voltage and high frequency conditions, ensuring efficient conversion and utilization of electric energy, and is suitable for applications in the field of renewable energy.

KHB9D0N50P1_07-VB MOSFET meets the stringent requirements of modern electronic devices for efficiency, stability and economy through its excellent performance and efficient power management capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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