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KHB9D0N50F1-VB Product details
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1. KHB9D0N50F1-VB MOSFET Product Introduction
KHB9D0N50F1-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage applications. The drain-source voltage (VDS) of this device reaches 650V, which can meet the needs of a variety of high voltage applications. Its gate-source voltage (VGS) is ±30V, the turn-on voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 680mΩ@VGS=10V. This MOSFET has a drain current (ID) handling capability of up to 12A and uses planar technology to ensure its stability and reliability in high voltage and high current applications. KHB9D0N50F1-VB is very suitable for switching power supplies, motor drives and other high voltage power electronics applications, which can effectively improve system performance and reduce power consumption.
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KHB9D0N50F1-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage applications. The drain-source voltage (VDS) of this device reaches 650V, which can meet the needs of a variety of high voltage applications. Its gate-source voltage (VGS) is ±30V, the turn-on voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 680mΩ@VGS=10V. This MOSFET has a drain current (ID) handling capability of up to 12A and uses planar technology to ensure its stability and reliability in high voltage and high current applications. KHB9D0N50F1-VB is very suitable for switching power supplies, motor drives and other high voltage power electronics applications, which can effectively improve system performance and reduce power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. KHB9D0N50F1-VB MOSFET Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|------------------------------------|
| **Package type** | TO220F |
| **Channel configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Throughput (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 680mΩ@VGS=10V |
| **Drain current (ID)** | 12A |
| **Technology type** | Planar |
| **Maximum power consumption** | 50W |
| **Operating temperature range** | -55°C to 150°C |
The high withstand voltage and excellent conduction performance of KHB9D0N50F1-VB make it have good application potential in the field of power electronics and suitable for various high-efficiency power management solutions.
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| **Parameter** | **Description** |
|-----------------------|------------------------------------|
| **Package type** | TO220F |
| **Channel configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Throughput (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 680mΩ@VGS=10V |
| **Drain current (ID)** | 12A |
| **Technology type** | Planar |
| **Maximum power consumption** | 50W |
| **Operating temperature range** | -55°C to 150°C |
The high withstand voltage and excellent conduction performance of KHB9D0N50F1-VB make it have good application potential in the field of power electronics and suitable for various high-efficiency power management solutions.
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Domain and module applications：
3. Application fields and modules of KHB9D0N50F1-VB MOSFET
1. **Switching Power Supply (SMPS)**:
KHB9D0N50F1-VB is an ideal choice for switching power supply design, capable of handling input voltages up to 650V. Its low on-resistance (680mΩ@VGS=10V) ensures high efficiency of power conversion, suitable for high-power electronic devices, providing stable output and reducing power consumption.
2. **Motor Drive**:
This MOSFET is suitable for motor drive circuits, capable of providing up to 12A of drain current, meeting the driving requirements of most motors. Its high voltage resistance and good thermal performance ensure the efficiency and reliability of motor drive systems, and are widely used in motor control in industrial and consumer electronics.
3. **Power Converters**:
KHB9D0N50F1-VB can be widely used in AC-DC and DC-DC converters. With its high voltage and high current handling capabilities, it is able to achieve stable and reliable performance in a variety of power conversion scenarios, ensuring effective power transmission in the system.
4. **Lighting System**:
This MOSFET is also suitable for LED lighting and other lighting control circuits. Due to its excellent conduction performance, the KHB9D0N50F1-VB can achieve efficient LED switching and dimming functions to meet different lighting needs and application scenarios.
The diverse application areas of the KHB9D0N50F1-VB, especially in high voltage and high current power electronic modules, make it an ideal solution that can adapt to the various needs of modern power management.
1. **Switching Power Supply (SMPS)**:
KHB9D0N50F1-VB is an ideal choice for switching power supply design, capable of handling input voltages up to 650V. Its low on-resistance (680mΩ@VGS=10V) ensures high efficiency of power conversion, suitable for high-power electronic devices, providing stable output and reducing power consumption.
2. **Motor Drive**:
This MOSFET is suitable for motor drive circuits, capable of providing up to 12A of drain current, meeting the driving requirements of most motors. Its high voltage resistance and good thermal performance ensure the efficiency and reliability of motor drive systems, and are widely used in motor control in industrial and consumer electronics.
3. **Power Converters**:
KHB9D0N50F1-VB can be widely used in AC-DC and DC-DC converters. With its high voltage and high current handling capabilities, it is able to achieve stable and reliable performance in a variety of power conversion scenarios, ensuring effective power transmission in the system.
4. **Lighting System**:
This MOSFET is also suitable for LED lighting and other lighting control circuits. Due to its excellent conduction performance, the KHB9D0N50F1-VB can achieve efficient LED switching and dimming functions to meet different lighting needs and application scenarios.
The diverse application areas of the KHB9D0N50F1-VB, especially in high voltage and high current power electronic modules, make it an ideal solution that can adapt to the various needs of modern power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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