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KHB9D0N50F1-U P-VB Product details
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The KHB9D0N50F1-U P-VB is a high-performance N-channel power MOSFET in a TO220F package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) can reach 650V, the gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. At VGS = 10V, the on-resistance (RDS(ON)) is 680mΩ and the maximum drain current (ID) is 12A. The KHB9D0N50F1-U P-VB uses Plannar technology to ensure high performance and reliability in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. Product Introduction
KHB9D0N50F1-U P-VB is an N-channel power MOSFET designed for high voltage and high efficiency applications. Its maximum operating voltage is 650V, suitable for electronic devices that require high voltage operation. The use of TO220F package not only improves the heat dissipation performance, but also ensures the convenience of circuit installation. Its low on-resistance enables it to effectively reduce power loss under high current conditions, improving the energy efficiency and performance of the overall circuit.
KHB9D0N50F1-U P-VB is an N-channel power MOSFET designed for high voltage and high efficiency applications. Its maximum operating voltage is 650V, suitable for electronic devices that require high voltage operation. The use of TO220F package not only improves the heat dissipation performance, but also ensures the convenience of circuit installation. Its low on-resistance enables it to effectively reduce power loss under high current conditions, improving the energy efficiency and performance of the overall circuit.
Domain and module applications：
3. Application fields and modules
1. **Switching power supply (SMPS)**: The high drain-source voltage and low on-resistance of KHB9D0N50F1-U P-VB make it an ideal choice in high-voltage switching power supply design. It can effectively reduce energy loss in the power conversion process and is suitable for various power conversion devices such as adapters and power modules.
2. **Motor drive**: With its 12A drain current capability, KHB9D0N50F1-U P-VB is very suitable for motor control circuits, especially in DC motor and stepper motor applications. This MOSFET can operate stably under high voltage and high current conditions to ensure efficient motor drive.
3. **Industrial automation**: KHB9D0N50F1-U P-VB is also suitable for industrial automation equipment, especially in the drive circuits of high-voltage sensors and relays. Its excellent voltage resistance and stability enable it to maintain reliability in various industrial environments.
4. **Power Management System**: In power conversion and management modules, such as inverters and power conditioners, the KHB9D0N50F1-U P-VB can efficiently control the flow of current, which is suitable for renewable energy systems and other power equipment to ensure safe and stable operation of the system under high voltage.
In summary, the KHB9D0N50F1-U P-VB is a high-efficiency power MOSFET with a wide range of applications and excellent electrical performance, and can play an important role in a variety of high-voltage and medium-current electrical equipment.
1. **Switching power supply (SMPS)**: The high drain-source voltage and low on-resistance of KHB9D0N50F1-U P-VB make it an ideal choice in high-voltage switching power supply design. It can effectively reduce energy loss in the power conversion process and is suitable for various power conversion devices such as adapters and power modules.
2. **Motor drive**: With its 12A drain current capability, KHB9D0N50F1-U P-VB is very suitable for motor control circuits, especially in DC motor and stepper motor applications. This MOSFET can operate stably under high voltage and high current conditions to ensure efficient motor drive.
3. **Industrial automation**: KHB9D0N50F1-U P-VB is also suitable for industrial automation equipment, especially in the drive circuits of high-voltage sensors and relays. Its excellent voltage resistance and stability enable it to maintain reliability in various industrial environments.
4. **Power Management System**: In power conversion and management modules, such as inverters and power conditioners, the KHB9D0N50F1-U P-VB can efficiently control the flow of current, which is suitable for renewable energy systems and other power equipment to ensure safe and stable operation of the system under high voltage.
In summary, the KHB9D0N50F1-U P-VB is a high-efficiency power MOSFET with a wide range of applications and excellent electrical performance, and can play an important role in a variety of high-voltage and medium-current electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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