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KHB7D5N60F1-U P-VB Product details
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KHB7D5N60F1-U P-VB MOSFET Product Introduction:
KHB7D5N60F1-U P-VB is a high-performance unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. The device has a maximum drain-source voltage (VDS) of 650V, making it suitable for use in high voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring its stability under voltage fluctuation conditions. Its threshold voltage (Vth) is 3.5V, ensuring good response to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 2560mΩ, effectively reducing conduction losses. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, providing high reliability and stable switching performance.
KHB7D5N60F1-U P-VB is a high-performance unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. The device has a maximum drain-source voltage (VDS) of 650V, making it suitable for use in high voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring its stability under voltage fluctuation conditions. Its threshold voltage (Vth) is 3.5V, ensuring good response to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 2560mΩ, effectively reducing conduction losses. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, providing high reliability and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- This package design provides good heat dissipation performance, suitable for high power and high voltage applications, while achieving electrical insulation between the MOSFET and the heat sink.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel configuration makes this MOSFET easy to use in switching applications and suitable for a variety of circuit designs.
3. **VDS (drain-source voltage)**: 650V
- This MOSFET can withstand drain-source voltages up to 650V, suitable for the design of high voltage power supplies and equipment.
4. **VGS (gate-source voltage)**: ±30V
- The wide gate-source voltage range ensures safe operation in a variety of voltage environments, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
- The threshold voltage is 3.5V, which is suitable for compatibility with common control logic and ensures good switching performance.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- Moderate on-resistance can effectively reduce conduction loss, suitable for low-power and medium-current applications.
7. **ID (Continuous Drain Current)**: 4A
- The device can handle a maximum continuous current of 4A, suitable for medium-power switching applications.
8. **Technology**: Planar Technology
- Manufactured using planar technology, it provides excellent electrical performance and reliability, suitable for general power and load control.
1. **Package**: TO220F
- This package design provides good heat dissipation performance, suitable for high power and high voltage applications, while achieving electrical insulation between the MOSFET and the heat sink.
2. **Configuration**: Unipolar N-channel
- The unipolar N-channel configuration makes this MOSFET easy to use in switching applications and suitable for a variety of circuit designs.
3. **VDS (drain-source voltage)**: 650V
- This MOSFET can withstand drain-source voltages up to 650V, suitable for the design of high voltage power supplies and equipment.
4. **VGS (gate-source voltage)**: ±30V
- The wide gate-source voltage range ensures safe operation in a variety of voltage environments, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
- The threshold voltage is 3.5V, which is suitable for compatibility with common control logic and ensures good switching performance.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- Moderate on-resistance can effectively reduce conduction loss, suitable for low-power and medium-current applications.
7. **ID (Continuous Drain Current)**: 4A
- The device can handle a maximum continuous current of 4A, suitable for medium-power switching applications.
8. **Technology**: Planar Technology
- Manufactured using planar technology, it provides excellent electrical performance and reliability, suitable for general power and load control.
Domain and module applications：
Application Examples:
1. **Switching Power Supply (SMPS)**:
The KHB7D5N60F1-U P-VB MOSFET is widely used in switching power supply designs, especially for power factor correction (PFC) and output rectification circuits. Its high voltage rating and low on-resistance make it an excellent performer in power adapters for consumer electronics.
2. **Motor Control**:
Due to its 650V VDS rating, this MOSFET is ideal for motor control applications such as home appliances such as air conditioners and washing machines. It acts as a switch in inverter circuits and is capable of meeting medium current drive requirements.
3. **LED Lighting Systems**:
The KHB7D5N60F1-U P-VB MOSFET can be used in LED lighting applications as a switch in high voltage LED drive circuits, suitable for commercial and industrial lighting solutions.
4. **HVAC Systems**:
In heating, ventilation and air conditioning (HVAC) systems, this MOSFET can be used to control the drive of compressors and fan motors, and its high voltage tolerance ensures stability under various operating conditions.
5. **Industrial Power Converters**:
The KHB7D5N60F1-U P-VB MOSFET can also be used in small industrial power converters as a switching element to handle high voltage power conversion, providing a reliable power solution for medium power applications.
The design of the KHB7D5N60F1-U P-VB MOSFET ensures that it provides an efficient and reliable switching solution in high voltage and medium current applications, and is widely used in a variety of power supplies and drive circuits.
1. **Switching Power Supply (SMPS)**:
The KHB7D5N60F1-U P-VB MOSFET is widely used in switching power supply designs, especially for power factor correction (PFC) and output rectification circuits. Its high voltage rating and low on-resistance make it an excellent performer in power adapters for consumer electronics.
2. **Motor Control**:
Due to its 650V VDS rating, this MOSFET is ideal for motor control applications such as home appliances such as air conditioners and washing machines. It acts as a switch in inverter circuits and is capable of meeting medium current drive requirements.
3. **LED Lighting Systems**:
The KHB7D5N60F1-U P-VB MOSFET can be used in LED lighting applications as a switch in high voltage LED drive circuits, suitable for commercial and industrial lighting solutions.
4. **HVAC Systems**:
In heating, ventilation and air conditioning (HVAC) systems, this MOSFET can be used to control the drive of compressors and fan motors, and its high voltage tolerance ensures stability under various operating conditions.
5. **Industrial Power Converters**:
The KHB7D5N60F1-U P-VB MOSFET can also be used in small industrial power converters as a switching element to handle high voltage power conversion, providing a reliable power solution for medium power applications.
The design of the KHB7D5N60F1-U P-VB MOSFET ensures that it provides an efficient and reliable switching solution in high voltage and medium current applications, and is widely used in a variety of power supplies and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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