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KHB7D0N80F1-VB Product details
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KHB7D0N80F1-VB MOSFET Product Introduction:
KHB7D0N80F1-VB is a high-performance unipolar N-channel MOSFET designed for high-voltage power applications and is packaged in TO220F. The drain-source voltage (VDS) rating of this MOSFET is 800V, which can meet the needs of a variety of high-voltage applications. The gate-source voltage (VGS) rating is ±30V, ensuring stability under a variety of operating conditions. Its threshold voltage (Vth) is 3.5V, allowing the MOSFET to be reliably turned on under appropriate gate voltage. Under VGS=10V conditions, the RDS(ON) value of KHB7D0N80F1-VB is 1100mΩ, providing good conductivity and thus reducing conduction losses. The rated drain current (ID) of this MOSFET is 5A, which is suitable for medium-power applications. The use of SJ_Multi-EPI technology gives it better thermal management capabilities and stability under high-voltage operation.
KHB7D0N80F1-VB is a high-performance unipolar N-channel MOSFET designed for high-voltage power applications and is packaged in TO220F. The drain-source voltage (VDS) rating of this MOSFET is 800V, which can meet the needs of a variety of high-voltage applications. The gate-source voltage (VGS) rating is ±30V, ensuring stability under a variety of operating conditions. Its threshold voltage (Vth) is 3.5V, allowing the MOSFET to be reliably turned on under appropriate gate voltage. Under VGS=10V conditions, the RDS(ON) value of KHB7D0N80F1-VB is 1100mΩ, providing good conductivity and thus reducing conduction losses. The rated drain current (ID) of this MOSFET is 5A, which is suitable for medium-power applications. The use of SJ_Multi-EPI technology gives it better thermal management capabilities and stability under high-voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameters of KHB7D0N80F1-VB:
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**: 1100mΩ @ VGS=10V
- **ID (continuous drain current)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (drain-source on-resistance)**: 1100mΩ @ VGS=10V
- **ID (continuous drain current)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application examples of KHB7D0N80F1-VB MOSFET:
1. **Switching Power Supply**: KHB7D0N80F1-VB is well suited for high-voltage switching power supply designs, including switch-mode power supplies (SMPS) and inverters. Its high voltage capability of 800V ensures safe and efficient operation in power adapters and other power modules for industrial and consumer electronics.
2. **Motor Drive Control**: This MOSFET can be used in motor drive circuits, especially in applications that require high voltage and medium current, such as appliance motors and industrial equipment. With its 5A rated current capability, KHB7D0N80F1-VB is able to effectively manage the starting, running and speed regulation of motors.
3. **LED Drive and Lighting Applications**: KHB7D0N80F1-VB is suitable for high-voltage LED drive circuits, which are widely used in commercial lighting and indoor lighting systems. Due to its low on-resistance, it can provide stable current output, ensuring the brightness and energy efficiency of LED lighting.
4. **Renewable energy system**: In solar inverters and wind power generation systems, the high voltage characteristics of KHB7D0N80F1-VB can effectively convert DC to AC, and is widely used in photovoltaic systems and battery energy storage solutions, improving the application efficiency and reliability of renewable energy.
1. **Switching Power Supply**: KHB7D0N80F1-VB is well suited for high-voltage switching power supply designs, including switch-mode power supplies (SMPS) and inverters. Its high voltage capability of 800V ensures safe and efficient operation in power adapters and other power modules for industrial and consumer electronics.
2. **Motor Drive Control**: This MOSFET can be used in motor drive circuits, especially in applications that require high voltage and medium current, such as appliance motors and industrial equipment. With its 5A rated current capability, KHB7D0N80F1-VB is able to effectively manage the starting, running and speed regulation of motors.
3. **LED Drive and Lighting Applications**: KHB7D0N80F1-VB is suitable for high-voltage LED drive circuits, which are widely used in commercial lighting and indoor lighting systems. Due to its low on-resistance, it can provide stable current output, ensuring the brightness and energy efficiency of LED lighting.
4. **Renewable energy system**: In solar inverters and wind power generation systems, the high voltage characteristics of KHB7D0N80F1-VB can effectively convert DC to AC, and is widely used in photovoltaic systems and battery energy storage solutions, improving the application efficiency and reliability of renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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