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KHB5D0N50P-VB Product details

Product introduction:

Product Introduction:
KHB5D0N50P-VB is a high-performance unipolar N-channel power MOSFET in TO220 package, designed for 600V high-voltage applications. The device has a gate-source voltage (VGS) range of ±30V and a turn-on voltage (Vth) of 3.5V, ensuring its good switching performance. The on-resistance (RDS(ON)) of KHB5D0N50P-VB is 1070mΩ (VGS=4.5V) and 780mΩ (VGS=10V), respectively, and performs well at a drain current (ID) of 8A. Manufactured using planar technology, this MOSFET has significant advantages in high efficiency and reliability, and is suitable for a variety of high-power and high-frequency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 3.5V 8A 780mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 600V 3.5V 8A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 600V 3.5V 8A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1070mΩ @ VGS = 4.5V
- 780mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
- **Technology**: Planar
- **Gate charge (Qg)**: Medium, suitable for high-frequency switching applications
- **Thermal resistance (Rth)**: Designed for good thermal management to adapt to high-power and high-frequency operation.

Domain and module applications:

Application fields and modules:
KHB5D0N50P-VB MOSFET can be widely used in the following fields and modules:

1. **Switching Power Supply (SMPS)**: KHB5D0N50P-VB is an ideal choice for high-voltage switching power supplies. It can handle 600V voltage and has low conduction loss characteristics. It is very suitable for power electronic equipment and industrial power systems to improve system energy efficiency.

2. **LED Driver**: Due to its excellent voltage and current characteristics, KHB5D0N50P-VB performs well in LED drive applications. It can provide stable current output and is suitable for high-power LED lighting and dimming applications. Ensure the stability and long life of the light source.

3. **Motor Driver**: In various motor drive applications, such as DC motor and stepper motor control, KHB5D0N50P-VB's high current carrying capacity and low on-resistance make it an ideal choice for efficient motion control. It is widely used in industrial automation and robotics.

4. **Power Adapter**: This MOSFET can be used in various power adapters and chargers. As a switching element, it can improve charging efficiency and reduce energy loss, ensuring stability and safety under high power output.

5. **Inverter**: KHB5D0N50P-VB is suitable for high-frequency applications such as solar inverters. It can work effectively under high voltage conditions to ensure efficient conversion of electrical energy and is suitable for applications in renewable energy systems.

KHB5D0N50P-VB MOSFET meets the stringent requirements of modern electronic devices for efficiency, stability and economy through its excellent performance and efficient power management capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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