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KHB4D5N60F-VB Product details
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KHB4D5N60F-VB MOSFET Product Introduction
KHB4D5N60F-VB is a high voltage unipolar N-channel MOSFET designed with Plannar technology and developed specifically for high voltage and medium power applications. The MOSFET is packaged in a TO-220F package and supports a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, which ensures reliable turn-on at standard gate drive voltage. The KHB4D5N60F-VB has an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V, suitable for power conversion and control applications. The device has a continuous drain current (ID) of 4A, suitable for a variety of medium power switching applications.
KHB4D5N60F-VB is a high voltage unipolar N-channel MOSFET designed with Plannar technology and developed specifically for high voltage and medium power applications. The MOSFET is packaged in a TO-220F package and supports a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, which ensures reliable turn-on at standard gate drive voltage. The KHB4D5N60F-VB has an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V, suitable for power conversion and control applications. The device has a continuous drain current (ID) of 4A, suitable for a variety of medium power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO-220F, suitable for medium and high power applications requiring heat dissipation capabilities.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 650V, suitable for high voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±30V, ensuring stable operation at high gate-source voltage.
- **Threshold voltage (Vth)**: 3.5V, providing reliable switching performance.
- **On-resistance (RDS(ON))**: 2560mΩ at VGS=10V, suitable for medium power applications.
- **Continuous leakage current (ID)**: 4A, suitable for medium power switching and control applications.
- **Technology**: Plannar, providing stable current handling capability.
- **Package**: TO-220F, suitable for medium and high power applications requiring heat dissipation capabilities.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 650V, suitable for high voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±30V, ensuring stable operation at high gate-source voltage.
- **Threshold voltage (Vth)**: 3.5V, providing reliable switching performance.
- **On-resistance (RDS(ON))**: 2560mΩ at VGS=10V, suitable for medium power applications.
- **Continuous leakage current (ID)**: 4A, suitable for medium power switching and control applications.
- **Technology**: Plannar, providing stable current handling capability.
Domain and module applications：
Applications and Modules
1. **Switching Power Supply**:
The KHB4D5N60F-VB MOSFET is ideal for use in switch mode power supplies (SMPS) such as AC-DC converters and DC-DC converters. Its high drain-source voltage of 650V can meet the requirements of high voltage power supply applications and maintain stable performance in high frequency switching operations.
2. **Motor Control**:
This MOSFET can be used in drive circuits for medium power motors, including brushless DC motors (BLDC) and stepper motors. Its 4A continuous drain current capability enables it to meet the power requirements of motors when starting and running, and is suitable for industrial automation equipment and household appliances.
3. **High Voltage Lighting Control**:
The KHB4D5N60F-VB can be used to drive high voltage LED lighting systems, such as high power LED lamps and industrial lighting. Its high voltage capability and moderate on-resistance enable it to effectively control the current in the lighting system to adapt to different lighting needs.
4. **Battery Management System (BMS)**:
This MOSFET is suitable for protection and management of lithium-ion battery packs in high-voltage battery management systems. Its 650V drain-source voltage ensures that it can be safely used in electric vehicles (EV) and renewable energy storage systems, providing reliable current handling capabilities.
1. **Switching Power Supply**:
The KHB4D5N60F-VB MOSFET is ideal for use in switch mode power supplies (SMPS) such as AC-DC converters and DC-DC converters. Its high drain-source voltage of 650V can meet the requirements of high voltage power supply applications and maintain stable performance in high frequency switching operations.
2. **Motor Control**:
This MOSFET can be used in drive circuits for medium power motors, including brushless DC motors (BLDC) and stepper motors. Its 4A continuous drain current capability enables it to meet the power requirements of motors when starting and running, and is suitable for industrial automation equipment and household appliances.
3. **High Voltage Lighting Control**:
The KHB4D5N60F-VB can be used to drive high voltage LED lighting systems, such as high power LED lamps and industrial lighting. Its high voltage capability and moderate on-resistance enable it to effectively control the current in the lighting system to adapt to different lighting needs.
4. **Battery Management System (BMS)**:
This MOSFET is suitable for protection and management of lithium-ion battery packs in high-voltage battery management systems. Its 650V drain-source voltage ensures that it can be safely used in electric vehicles (EV) and renewable energy storage systems, providing reliable current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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