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KHB4D0N65F-VB Product details
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KHB4D0N65F-VB MOSFET Product Introduction:
KHB4D0N65F-VB is a high-performance unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. The device has a maximum drain-source voltage (VDS) of 650V, which is suitable for power management and load control in high voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring stable operation of the device under various voltage fluctuation conditions. Its threshold voltage (Vth) is 3.5V, which can ensure good response to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 2560mΩ, which can effectively reduce conduction losses and improve the overall efficiency of the system. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, providing high reliability and stable switching performance.
KHB4D0N65F-VB is a high-performance unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. The device has a maximum drain-source voltage (VDS) of 650V, which is suitable for power management and load control in high voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring stable operation of the device under various voltage fluctuation conditions. Its threshold voltage (Vth) is 3.5V, which can ensure good response to control signals. At VGS=10V, the on-resistance (RDS(ON)) is 2560mΩ, which can effectively reduce conduction losses and improve the overall efficiency of the system. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, providing high reliability and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- This package design not only provides good heat dissipation performance, but also achieves electrical insulation between the MOSFET and the heat sink, which is suitable for high-power and high-voltage application scenarios.
2. **Configuration**: Unipolar N-channel
- This configuration is simple and easy to use, suitable for switching applications in a variety of circuits.
3. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage that the MOSFET can withstand is 650V, which is suitable for the design of high-voltage power supplies and equipment.
4. **VGS (gate-source voltage)**: ±30V
- The allowable gate-source voltage range ensures safe operation in various voltage environments and provides reliability.
5. **Vth (Threshold Voltage)**: 3.5V
- The threshold voltage of the MOSFET is 3.5V, ensuring that it can be effectively turned on at common logic levels.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- The relatively high on-resistance makes it effective in low-power or medium-current operation, which can reduce conduction losses.
7. **ID (Continuous Drain Current)**: 4A
- The device can handle a maximum continuous current of 4A, suitable for medium-power switching applications.
8. **Technology**: Planar Technology
- Manufactured using planar technology, it provides excellent electrical performance and reliability, suitable for general-purpose power supplies and load control.
1. **Package**: TO220F
- This package design not only provides good heat dissipation performance, but also achieves electrical insulation between the MOSFET and the heat sink, which is suitable for high-power and high-voltage application scenarios.
2. **Configuration**: Unipolar N-channel
- This configuration is simple and easy to use, suitable for switching applications in a variety of circuits.
3. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage that the MOSFET can withstand is 650V, which is suitable for the design of high-voltage power supplies and equipment.
4. **VGS (gate-source voltage)**: ±30V
- The allowable gate-source voltage range ensures safe operation in various voltage environments and provides reliability.
5. **Vth (Threshold Voltage)**: 3.5V
- The threshold voltage of the MOSFET is 3.5V, ensuring that it can be effectively turned on at common logic levels.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- The relatively high on-resistance makes it effective in low-power or medium-current operation, which can reduce conduction losses.
7. **ID (Continuous Drain Current)**: 4A
- The device can handle a maximum continuous current of 4A, suitable for medium-power switching applications.
8. **Technology**: Planar Technology
- Manufactured using planar technology, it provides excellent electrical performance and reliability, suitable for general-purpose power supplies and load control.
Domain and module applications：
Application Examples:
1. **Switching Power Supply (SMPS)**:
The KHB4D0N65F-VB MOSFET is widely used in switching power supply designs, especially for power factor correction (PFC) and output rectification circuits. Its high VDS rating and on-resistance make it an excellent performer in power adapters for consumer electronics.
2. **Motor Control**:
Due to its 650V VDS rating, this MOSFET is suitable for motor control applications such as home appliances such as washing machines and air conditioners. It can be used as a switch in inverter circuits to meet medium current drive requirements.
3. **LED Lighting Systems**:
The KHB4D0N65F-VB MOSFET can be used in LED lighting circuits to control high voltage LED drivers, suitable for commercial and industrial lighting solutions.
4. **HVAC systems**:
In heating, ventilation and air conditioning (HVAC) systems, the KHB4D0N65F-VB can be used to control motors for compressors and fans, with its high voltage tolerance ensuring stability under a variety of operating conditions.
5. **Industrial power converters**:
In some small industrial power converters, the KHB4D0N65F-VB MOSFET can be used as a switching element for high voltage power conversion, providing a reliable power solution for medium power applications.
The design of the KHB4D0N65F-VB MOSFET ensures that it provides an efficient and reliable switching solution in high voltage and medium current applications, suitable for a variety of power supplies and drive circuits.
1. **Switching Power Supply (SMPS)**:
The KHB4D0N65F-VB MOSFET is widely used in switching power supply designs, especially for power factor correction (PFC) and output rectification circuits. Its high VDS rating and on-resistance make it an excellent performer in power adapters for consumer electronics.
2. **Motor Control**:
Due to its 650V VDS rating, this MOSFET is suitable for motor control applications such as home appliances such as washing machines and air conditioners. It can be used as a switch in inverter circuits to meet medium current drive requirements.
3. **LED Lighting Systems**:
The KHB4D0N65F-VB MOSFET can be used in LED lighting circuits to control high voltage LED drivers, suitable for commercial and industrial lighting solutions.
4. **HVAC systems**:
In heating, ventilation and air conditioning (HVAC) systems, the KHB4D0N65F-VB can be used to control motors for compressors and fans, with its high voltage tolerance ensuring stability under a variety of operating conditions.
5. **Industrial power converters**:
In some small industrial power converters, the KHB4D0N65F-VB MOSFET can be used as a switching element for high voltage power conversion, providing a reliable power solution for medium power applications.
The design of the KHB4D0N65F-VB MOSFET ensures that it provides an efficient and reliable switching solution in high voltage and medium current applications, suitable for a variety of power supplies and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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