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KHB2D0N60P-VB Product details

Product introduction:

Product Introduction
KHB2D0N60P-VB is a high-performance single N-channel MOSFET in TO220 package with good heat dissipation and electrical characteristics. The device has a drain-source voltage (VDS) of up to 650V, suitable for high-voltage applications, and a gate voltage rating of ±30V (VGS), providing a safe operating range. Its turn-on threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 3900mΩ (at VGS=4.5V) and 3120mΩ (at VGS=10V) at different gate voltages, and the maximum continuous drain current (ID) is 2A. KHB2D0N60P-VB uses planar technology (Plannar), which ensures excellent electrical performance and thermal stability, and is widely used in a variety of power management and control modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 2A 3120mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed explanation of product parameters
1. **Package type**: TO220, suitable for high power applications, can be used with a heat sink to improve heat dissipation efficiency.
2. **Drain-source voltage (VDS)**: 650V, suitable for high voltage applications such as switching power supplies and inverters.
3. **Gate voltage (VGS)**: ±30V, ensuring safe operation and good anti-breakdown capability.
4. **Turn-on threshold voltage (Vth)**: 3.5V, which can control the turn-on state of the MOSFET during design to adapt to different circuit requirements.
5. **On-resistance (RDS(ON))**:
- 3900mΩ@VGS=4.5V: It can still work at lower gate drive voltages, suitable for low power applications.
- 3120mΩ@VGS=10V: At higher gate voltages, the on-resistance is reduced, which helps reduce power consumption.
6. **Drain current (ID)**: 2A, suitable for low to medium current switch control applications.
7. **Technology type**: Plannar, planar technology can provide good electrical performance and thermal management, suitable for mass production.

Domain and module applications:

Applications and modules
1. **Switching Power Supply (SMPS)**: KHB2D0N60P-VB is widely used in high-voltage switching power supply design. It can achieve efficient power conversion under 650V working conditions. It is suitable for adapters and power modules to ensure high efficiency and stability.

2. **LED Driver**: This MOSFET can be used in high-power LED driver power supplies to provide stable current output, ensure the brightness and service life of LED lamps, and is suitable for lighting applications.

3. **Motor Drive**: In small motor control systems, KHB2D0N60P-VB can be used as a switching element, suitable for low-current motor drive applications, and supports motor control in industrial and home appliance fields.

4. **Inverter**: In photovoltaic inverters and other types of inverters, this device can effectively achieve high voltage switching, suitable for applications that convert DC to AC, and ensure efficient operation of the inverter.

5. **UPS power supply (uninterruptible power supply)**: This MOSFET is suitable for uninterruptible power supply systems, which can provide fast switching and stable power output to ensure the normal operation of key equipment in the event of power failure. It is suitable for data protection and emergency power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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