中文
English
KF9N25P-VB Product details
Back to previous pageProduct introduction：
KF9N25P-VB MOSFET Product Introduction
The KF9N25P-VB is a high-efficiency unipolar N-channel MOSFET that uses advanced Trench technology and is designed to meet the needs of a variety of medium and high power applications. The MOSFET is packaged in a TO-251 package and has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, ensuring that it can be reliably turned on under standard gate drive voltage. The KF9N25P-VB has a low on-resistance (RDS(ON)) of 176mΩ at VGS=10V, effectively reducing conduction losses and thus improving the overall efficiency of the system. With a continuous drain current (ID) of 17A, the device is suitable for a variety of medium to high power switching and control applications.
The KF9N25P-VB is a high-efficiency unipolar N-channel MOSFET that uses advanced Trench technology and is designed to meet the needs of a variety of medium and high power applications. The MOSFET is packaged in a TO-251 package and has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, ensuring that it can be reliably turned on under standard gate drive voltage. The KF9N25P-VB has a low on-resistance (RDS(ON)) of 176mΩ at VGS=10V, effectively reducing conduction losses and thus improving the overall efficiency of the system. With a continuous drain current (ID) of 17A, the device is suitable for a variety of medium to high power switching and control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO-251, a compact surface mount package for medium to high power applications.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 250V, suitable for medium and high voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±20V, ensuring stable operation at high gate-source voltage.
- **Threshold voltage (Vth)**: 3.5V, providing reliable switching performance.
- **On-resistance (RDS(ON))**: 176mΩ at VGS=10V, minimizing conduction losses.
- **Continuous leakage current (ID)**: 17A, suitable for medium and high power requirements.
- **Technology**: Trench, designed to improve conduction efficiency and switching performance.
- **Package**: TO-251, a compact surface mount package for medium to high power applications.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 250V, suitable for medium and high voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±20V, ensuring stable operation at high gate-source voltage.
- **Threshold voltage (Vth)**: 3.5V, providing reliable switching performance.
- **On-resistance (RDS(ON))**: 176mΩ at VGS=10V, minimizing conduction losses.
- **Continuous leakage current (ID)**: 17A, suitable for medium and high power requirements.
- **Technology**: Trench, designed to improve conduction efficiency and switching performance.
Domain and module applications：
Applications and modules
1. **Switching Power Supply**:
The KF9N25P-VB MOSFET is ideal for use in switching mode power supplies (SMPS) such as AC-DC and DC-DC converters. Due to its 250V drain-source voltage, it can meet the requirements of medium and high voltage power supply applications, while its low on-resistance ensures high efficiency, making it suitable for use in various power management modules.
2. **Motor Control**:
This MOSFET is suitable for motor drive circuits such as brushless DC motors (BLDC) and stepper motors. Its 17A continuous drain current capability enables it to meet the power requirements of motor drives and is widely used in industrial automation, home appliances, and electric vehicles.
3. **Battery Management System (BMS)**:
The KF9N25P-VB can be used in high-voltage battery management systems, especially in the balancing and protection circuits of lithium-ion battery packs. Its high voltage and high current handling capabilities ensure the safety and efficiency of the battery system, making it suitable for electric vehicles (EVs) and energy storage solutions.
4. **LED lighting driver**:
This MOSFET is suitable for LED drive circuits, especially in high-voltage LED lighting systems. Its excellent conduction performance and high efficiency enable it to provide stable power output in industrial and commercial lighting applications, meeting the needs of modern lighting systems.
1. **Switching Power Supply**:
The KF9N25P-VB MOSFET is ideal for use in switching mode power supplies (SMPS) such as AC-DC and DC-DC converters. Due to its 250V drain-source voltage, it can meet the requirements of medium and high voltage power supply applications, while its low on-resistance ensures high efficiency, making it suitable for use in various power management modules.
2. **Motor Control**:
This MOSFET is suitable for motor drive circuits such as brushless DC motors (BLDC) and stepper motors. Its 17A continuous drain current capability enables it to meet the power requirements of motor drives and is widely used in industrial automation, home appliances, and electric vehicles.
3. **Battery Management System (BMS)**:
The KF9N25P-VB can be used in high-voltage battery management systems, especially in the balancing and protection circuits of lithium-ion battery packs. Its high voltage and high current handling capabilities ensure the safety and efficiency of the battery system, making it suitable for electric vehicles (EVs) and energy storage solutions.
4. **LED lighting driver**:
This MOSFET is suitable for LED drive circuits, especially in high-voltage LED lighting systems. Its excellent conduction performance and high efficiency enable it to provide stable power output in industrial and commercial lighting applications, meeting the needs of modern lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
