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KF7N50D-VB Product details
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KF7N50D-VB MOSFET Product Introduction
The KF7N50D-VB is a high-voltage unipolar N-channel MOSFET that uses SJ_Multi-EPI technology and is designed for high-efficiency and high-voltage applications. The MOSFET is packaged in a TO-252 package and supports a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at a standard gate drive voltage. The KF7N50D-VB has a low on-resistance (RDS(ON)) of 700mΩ at VGS=10V, which effectively reduces conduction losses. The device has a continuous drain current (ID) of 7A, making it suitable for medium-power switching and control applications.
The KF7N50D-VB is a high-voltage unipolar N-channel MOSFET that uses SJ_Multi-EPI technology and is designed for high-efficiency and high-voltage applications. The MOSFET is packaged in a TO-252 package and supports a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at a standard gate drive voltage. The KF7N50D-VB has a low on-resistance (RDS(ON)) of 700mΩ at VGS=10V, which effectively reduces conduction losses. The device has a continuous drain current (ID) of 7A, making it suitable for medium-power switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252, suitable for medium-power applications in surface mount.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 650V, suitable for high-voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±30V, ensuring stable operation at high voltage.
- **Threshold voltage (Vth)**: 3.5V, ensuring reliable switching performance.
- **On-resistance (RDS(ON))**: 700mΩ at VGS=10V, minimizing conduction losses.
- **Continuous leakage current (ID)**: 7A, suitable for medium-power switching and control applications.
- **Technology**: SJ_Multi-EPI, providing superior current handling capability and switching performance.
- **Package**: TO-252, suitable for medium-power applications in surface mount.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 650V, suitable for high-voltage power and switching applications.
- **Gate-source voltage (VGS)**: ±30V, ensuring stable operation at high voltage.
- **Threshold voltage (Vth)**: 3.5V, ensuring reliable switching performance.
- **On-resistance (RDS(ON))**: 700mΩ at VGS=10V, minimizing conduction losses.
- **Continuous leakage current (ID)**: 7A, suitable for medium-power switching and control applications.
- **Technology**: SJ_Multi-EPI, providing superior current handling capability and switching performance.
Domain and module applications：
Applications and Modules
1. **Power Converters**:
The KF7N50D-VB MOSFET is ideal for use in switch mode power supplies (SMPS) such as AC-DC converters and DC-DC converters. Its high drain-source voltage of 650V enables it to handle high voltage power applications, while its low on-resistance ensures high efficiency, thereby improving overall energy efficiency.
2. **Motor Control**:
This MOSFET can be used in control circuits for small to medium-sized motors, including brushless DC motors (BLDC) and stepper motors. Its 7A continuous drain current capability enables it to meet the power requirements of motor drives and is suitable for applications in industrial automation, home appliances, and electric vehicle drive systems.
3. **Battery Management System (BMS)**:
The KF7N50D-VB is suitable for use in battery management systems for balancing and protection circuits of high voltage lithium-ion battery packs. Its high voltage characteristics ensure that it excels in battery safety management for electric vehicles (EVs) and renewable energy storage systems.
4. **LED lighting driver**:
This MOSFET can be used to drive high-voltage LED lighting systems, suitable for industrial and commercial lighting applications. Its superior conduction performance and high efficiency enable it to achieve long-term stable operation in lighting solutions to meet various lighting needs.
1. **Power Converters**:
The KF7N50D-VB MOSFET is ideal for use in switch mode power supplies (SMPS) such as AC-DC converters and DC-DC converters. Its high drain-source voltage of 650V enables it to handle high voltage power applications, while its low on-resistance ensures high efficiency, thereby improving overall energy efficiency.
2. **Motor Control**:
This MOSFET can be used in control circuits for small to medium-sized motors, including brushless DC motors (BLDC) and stepper motors. Its 7A continuous drain current capability enables it to meet the power requirements of motor drives and is suitable for applications in industrial automation, home appliances, and electric vehicle drive systems.
3. **Battery Management System (BMS)**:
The KF7N50D-VB is suitable for use in battery management systems for balancing and protection circuits of high voltage lithium-ion battery packs. Its high voltage characteristics ensure that it excels in battery safety management for electric vehicles (EVs) and renewable energy storage systems.
4. **LED lighting driver**:
This MOSFET can be used to drive high-voltage LED lighting systems, suitable for industrial and commercial lighting applications. Its superior conduction performance and high efficiency enable it to achieve long-term stable operation in lighting solutions to meet various lighting needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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