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KF5N50P-VB Product details

Product introduction:

KF5N50P-VB MOSFET Product Introduction

KF5N50P-VB is a high-voltage unipolar N-channel MOSFET using planar technology (Plannar) designed for efficient power conversion and switching applications. The MOSFET is packaged in a TO-220 package with a drain-source voltage (VDS) of up to 600V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on under common gate drive voltages. The device has an on-resistance (RDS(ON)) of 1070mΩ at VGS=4.5V, which is reduced to 780mΩ at VGS=10V, reducing conduction losses. The KF5N50P-VB has a continuous drain current (ID) of 8A, suitable for medium to high power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 3.5V 8A 780mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 600V 3.5V 8A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 600V 3.5V 8A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO-220, a traditional package for high power applications.
- **Configuration**: Unipolar N-channel, suitable for a variety of power management and switching topologies.
- **Drain-source voltage (VDS)**: 600V, suitable for high voltage applications.
- **Gate-source voltage (VGS)**: ±30V, ensuring stable operation at high gate-source voltage.
- **Threshold voltage (Vth)**: 3.5V, providing reliable switching performance.
- **On-resistance (RDS(ON))**:
- 1070mΩ at VGS=4.5V,
- 780mΩ at VGS=10V, minimizing conduction losses.
- **Continuous leakage current (ID)**: 8A, suitable for medium to high power requirements.
- **Technology**: Plannar technology, suitable for high voltage and high current switching applications.

Domain and module applications:

Applications and Modules

1. **Switching Power Supply**:
The KF5N50P-VB MOSFET is ideal for switching mode power supplies (SMPS) such as AC-DC and DC-DC converters. Due to its high drain-source voltage (600V), the device is able to meet the needs of high voltage power supplies, while its low on-resistance can effectively reduce energy losses and improve energy efficiency.

2. **Motor Drive**:
This MOSFET can be used in motor drive circuits, including brushless DC motor (BLDC) and stepper motor drive applications. Its 8A continuous drain current capability enables it to handle medium power motor loads, suitable for industrial automation and electric vehicle drive systems.

3. **Battery Management System (BMS)**:
In battery management systems, the KF5N50P-VB is suitable for balancing and protection circuits of high-voltage battery packs. It can withstand high voltages, ensure the safety and efficiency of battery systems, and is widely used in electric vehicles (EVs) and energy storage systems.

4. **Lighting Control**:
This MOSFET can be used in the driver circuit of high-voltage LED lighting systems, suitable for industrial and commercial lighting applications. Its superior conduction characteristics make it perform well in high-efficiency lighting solutions and can provide long-term stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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