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KF5N50FS-VB Product details
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KF5N50FS-VB MOSFET Product Introduction:
KF5N50FS-VB is a unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is rated at ±30V, ensuring that the device can operate reliably in high voltage circuits. The threshold voltage (Vth) is 3.5V, making the MOSFET sensitive to control signals. The RDS(ON) is 1100mΩ at VGS=10V, which helps reduce conduction losses and is suitable for applications with higher current requirements. Its current handling capability (ID) is 7A and it is manufactured using planar technology with good performance and reliability.
KF5N50FS-VB is a unipolar N-channel power MOSFET designed for high voltage and medium current switching applications. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is rated at ±30V, ensuring that the device can operate reliably in high voltage circuits. The threshold voltage (Vth) is 3.5V, making the MOSFET sensitive to control signals. The RDS(ON) is 1100mΩ at VGS=10V, which helps reduce conduction losses and is suitable for applications with higher current requirements. Its current handling capability (ID) is 7A and it is manufactured using planar technology with good performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- Provides excellent heat dissipation and electrical insulation between the MOSFET and the heat sink, suitable for high power and high voltage applications.
2. **Configuration**: Unipolar N-channel
- Simple and easy-to-use configuration suitable for a variety of switching applications.
3. **VDS (Drain-Source Voltage)**: 650V
- The MOSFET can withstand drain-source voltages up to 650V, suitable for use in high voltage power circuits.
4. **VGS (Gate-Source Voltage)**: ±30V
- Gate-source voltage limitation allows safe operation in environments with voltage fluctuations.
5. **Vth (Threshold Voltage)**: 3.5V
- The MOSFET requires a gate-source voltage of 3.5V to turn on, suitable for compatibility with standard control logic.
6. **RDS(ON)**: 1100mΩ @ VGS=10V
- The lower on-resistance makes the device more efficient at medium currents and reduces conduction losses.
7. **ID(Continuous Drain Current)**: 7A
- The MOSFET can handle up to 7A of continuous current, suitable for medium power switching applications.
8. **Technology**: Planar Technology
- Planar technology provides good switching performance and stability, suitable for most general power supplies and load control.
1. **Package**: TO220F
- Provides excellent heat dissipation and electrical insulation between the MOSFET and the heat sink, suitable for high power and high voltage applications.
2. **Configuration**: Unipolar N-channel
- Simple and easy-to-use configuration suitable for a variety of switching applications.
3. **VDS (Drain-Source Voltage)**: 650V
- The MOSFET can withstand drain-source voltages up to 650V, suitable for use in high voltage power circuits.
4. **VGS (Gate-Source Voltage)**: ±30V
- Gate-source voltage limitation allows safe operation in environments with voltage fluctuations.
5. **Vth (Threshold Voltage)**: 3.5V
- The MOSFET requires a gate-source voltage of 3.5V to turn on, suitable for compatibility with standard control logic.
6. **RDS(ON)**: 1100mΩ @ VGS=10V
- The lower on-resistance makes the device more efficient at medium currents and reduces conduction losses.
7. **ID(Continuous Drain Current)**: 7A
- The MOSFET can handle up to 7A of continuous current, suitable for medium power switching applications.
8. **Technology**: Planar Technology
- Planar technology provides good switching performance and stability, suitable for most general power supplies and load control.
Domain and module applications：
Application Examples:
1. **Power Supply System**:
The KF5N50FS-VB MOSFET can be widely used in switch mode power supplies (SMPS), especially in PFC (power factor correction) and output rectification. Its high voltage withstand capability and good conduction performance make it very suitable for consumer electronics that require reliable power, such as desktop power adapters and TV power supplies.
2. **Motor Drive Control**:
Due to its 650V VDS rating, this MOSFET is suitable for motor drive control, for example in home appliances such as washing machines and air conditioners. It can be used as a switch in inverter circuits to drive various types of motors to meet medium current requirements.
3. **LED Lighting System**:
The KF5N50FS-VB MOSFET can be used in LED lighting drive circuits to control high voltage switching operations, suitable for industrial or outdoor lighting systems. Its lower on-resistance can improve efficiency and reduce energy loss.
4. **HVAC control systems**:
In heating, ventilation and air conditioning (HVAC) systems, the KF5N50FS-VB can be used as a switching element to control the motors of compressors and fans. Its high voltage rating ensures stable operation under various operating conditions.
5. **Industrial power converters**:
In some small industrial power converters, the KF5N50FS-VB MOSFET can be used as a switching element to convert high-voltage power supplies, suitable for medium-power applications, providing a reliable power solution.
The design of the KF5N50FS-VB MOSFET makes it very suitable for high-voltage and medium-current applications, and can provide efficient and reliable switching solutions in a variety of power supplies and drive circuits.
1. **Power Supply System**:
The KF5N50FS-VB MOSFET can be widely used in switch mode power supplies (SMPS), especially in PFC (power factor correction) and output rectification. Its high voltage withstand capability and good conduction performance make it very suitable for consumer electronics that require reliable power, such as desktop power adapters and TV power supplies.
2. **Motor Drive Control**:
Due to its 650V VDS rating, this MOSFET is suitable for motor drive control, for example in home appliances such as washing machines and air conditioners. It can be used as a switch in inverter circuits to drive various types of motors to meet medium current requirements.
3. **LED Lighting System**:
The KF5N50FS-VB MOSFET can be used in LED lighting drive circuits to control high voltage switching operations, suitable for industrial or outdoor lighting systems. Its lower on-resistance can improve efficiency and reduce energy loss.
4. **HVAC control systems**:
In heating, ventilation and air conditioning (HVAC) systems, the KF5N50FS-VB can be used as a switching element to control the motors of compressors and fans. Its high voltage rating ensures stable operation under various operating conditions.
5. **Industrial power converters**:
In some small industrial power converters, the KF5N50FS-VB MOSFET can be used as a switching element to convert high-voltage power supplies, suitable for medium-power applications, providing a reliable power solution.
The design of the KF5N50FS-VB MOSFET makes it very suitable for high-voltage and medium-current applications, and can provide efficient and reliable switching solutions in a variety of power supplies and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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