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KF5N50DZ-VB Product details
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The KF5N50DZ-VB is a single N-channel MOSFET in a TO252 package with excellent high voltage characteristics and reliable switching performance. Its main features include a drain-source voltage (VDS) of 650V, a gate voltage rating of ±30V (VGS), a turn-on threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1000mΩ (at VGS=10V), and a maximum continuous drain current (ID) of 5A. The device is based on Super Junction multi-epitaxial structure (SJ_Multi-EPI) technology, which is designed to improve voltage handling capabilities and reduce switching losses, and is suitable for high-efficiency power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed explanation of product parameters:
1. **Package type**: TO252, which is a common SMD package with low thermal resistance and good heat dissipation performance, suitable for high-current switching applications.
2. **Drain-source voltage (VDS)**: 650V, suitable for high-voltage applications such as switching power supplies and motor drives.
3. **Gate voltage (VGS)**: ±30V, which means that the MOSFET can operate at a gate voltage of plus or minus 30V, with strong anti-breakthrough capability.
4. **Turn-on threshold voltage (Vth)**: 3.5V, the minimum gate voltage at which the MOSFET starts to turn on, suitable for most standard drive circuits.
5. **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V, the resistance in the on state is small, reducing energy loss.
6. **Drain current (ID)**: 5A, suitable for medium current switch control applications.
7. **Technology type**: SJ_Multi-EPI, super junction multi-epitaxial technology, can effectively improve power density and efficiency.
1. **Package type**: TO252, which is a common SMD package with low thermal resistance and good heat dissipation performance, suitable for high-current switching applications.
2. **Drain-source voltage (VDS)**: 650V, suitable for high-voltage applications such as switching power supplies and motor drives.
3. **Gate voltage (VGS)**: ±30V, which means that the MOSFET can operate at a gate voltage of plus or minus 30V, with strong anti-breakthrough capability.
4. **Turn-on threshold voltage (Vth)**: 3.5V, the minimum gate voltage at which the MOSFET starts to turn on, suitable for most standard drive circuits.
5. **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V, the resistance in the on state is small, reducing energy loss.
6. **Drain current (ID)**: 5A, suitable for medium current switch control applications.
7. **Technology type**: SJ_Multi-EPI, super junction multi-epitaxial technology, can effectively improve power density and efficiency.
Domain and module applications：
：
1. **Switching Power Supply (SMPS)**: KF5N50DZ-VB can be used as high-voltage switching element of high-efficiency switching power supply, especially suitable for AC-DC converters, adapters and other equipment below 650V, which can effectively reduce switching losses and improve overall energy efficiency.
2. **LED Driver Power Supply**: This MOSFET can be used in high-power LED driver modules to provide stable voltage and current control, supporting efficient energy conversion and power management.
3. **Motor Drive**: In DC motor control and inverter, this MOSFET can provide reliable power switching operation, suitable for motor drive applications of industrial automation equipment, especially those requiring high voltage and stability.
4. **Photovoltaic Inverter**: In the DC-AC inverter of the photovoltaic system, KF5N50DZ-VB can withstand high voltage and support efficient power transmission and conversion.
5. **UPS Power Supply (Uninterruptible Power Supply)**: MOSFET can provide stable high-voltage switching capability for uninterruptible power supply modules, ensuring that the power supply provides stable output during the switching process.
1. **Switching Power Supply (SMPS)**: KF5N50DZ-VB can be used as high-voltage switching element of high-efficiency switching power supply, especially suitable for AC-DC converters, adapters and other equipment below 650V, which can effectively reduce switching losses and improve overall energy efficiency.
2. **LED Driver Power Supply**: This MOSFET can be used in high-power LED driver modules to provide stable voltage and current control, supporting efficient energy conversion and power management.
3. **Motor Drive**: In DC motor control and inverter, this MOSFET can provide reliable power switching operation, suitable for motor drive applications of industrial automation equipment, especially those requiring high voltage and stability.
4. **Photovoltaic Inverter**: In the DC-AC inverter of the photovoltaic system, KF5N50DZ-VB can withstand high voltage and support efficient power transmission and conversion.
5. **UPS Power Supply (Uninterruptible Power Supply)**: MOSFET can provide stable high-voltage switching capability for uninterruptible power supply modules, ensuring that the power supply provides stable output during the switching process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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