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KF4N20LW-RTKP-VB Product details
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1. Product Introduction
KF4N20LW-RTKP-VB MOSFET has a high drain-source voltage of 200V, suitable for handling higher voltage applications. Its compact SOT223 package makes it suitable for space-constrained circuit design, and the application of Trench technology significantly reduces conduction losses while maintaining good switching performance. Its high gate-source voltage tolerance (±20V) and low on-resistance (1200mΩ) ensure its wide application in low-power, high-efficiency circuits.
KF4N20LW-RTKP-VB MOSFET has a high drain-source voltage of 200V, suitable for handling higher voltage applications. Its compact SOT223 package makes it suitable for space-constrained circuit design, and the application of Trench technology significantly reduces conduction losses while maintaining good switching performance. Its high gate-source voltage tolerance (±20V) and low on-resistance (1200mΩ) ensure its wide application in low-power, high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description
- **Package**: SOT223
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ@VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench
- **Switching speed**: Fast, suitable for switching power supplies and drive circuits
- **Operating temperature range**: -55°C to +150°C
- **Package**: SOT223
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ@VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench
- **Switching speed**: Fast, suitable for switching power supplies and drive circuits
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. Application fields and modules
1. **LED drive circuit**: KF4N20LW-RTKP-VB performs well in small LED drive circuits, and is particularly suitable for designs that require low power consumption and high efficiency. Such applications usually require MOSFETs to have high voltage tolerance, and its 200V VDS just meets this requirement.
2. **Small switching power supply (SMPS)**: The trench technology and 200V withstand voltage characteristics of this MOSFET make it very suitable for use in small switching power supplies. Such power supply systems require MOSFETs to maintain stable switching performance under high voltage to improve the conversion efficiency of the system.
3. **Industrial control circuit**: Due to its high withstand voltage characteristics and low on-resistance, KF4N20LW-RTKP-VB can also be used in control modules in industrial automation equipment. These modules require efficient power switches to control motors, relays or other high-voltage components.
4. **Power management module in communication equipment**: The power management module in communication equipment requires efficient power conversion and management. KF4N20LW-RTKP-VB can provide robust switching capabilities to help communication equipment maintain reliable operation under various power supply conditions.
Through these application examples, it can be seen that KF4N20LW-RTKP-VB has broad application prospects in low-power designs that require high voltage and low current.
1. **LED drive circuit**: KF4N20LW-RTKP-VB performs well in small LED drive circuits, and is particularly suitable for designs that require low power consumption and high efficiency. Such applications usually require MOSFETs to have high voltage tolerance, and its 200V VDS just meets this requirement.
2. **Small switching power supply (SMPS)**: The trench technology and 200V withstand voltage characteristics of this MOSFET make it very suitable for use in small switching power supplies. Such power supply systems require MOSFETs to maintain stable switching performance under high voltage to improve the conversion efficiency of the system.
3. **Industrial control circuit**: Due to its high withstand voltage characteristics and low on-resistance, KF4N20LW-RTKP-VB can also be used in control modules in industrial automation equipment. These modules require efficient power switches to control motors, relays or other high-voltage components.
4. **Power management module in communication equipment**: The power management module in communication equipment requires efficient power conversion and management. KF4N20LW-RTKP-VB can provide robust switching capabilities to help communication equipment maintain reliable operation under various power supply conditions.
Through these application examples, it can be seen that KF4N20LW-RTKP-VB has broad application prospects in low-power designs that require high voltage and low current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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