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KF4N20LD-VB Product details
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KF4N20LD-VB MOSFET Product Introduction
The KF4N20LD-VB is a high-voltage unipolar N-channel MOSFET that uses advanced Trench technology and is designed to operate efficiently under high voltage conditions. The MOSFET is packaged in a TO-252 package and supports drain-source voltages (VDS) up to 200V and gate-source voltages (VGS) of ±20V. Its threshold voltage (Vth) is 3V, allowing it to be easily driven by a standard gate driver. The device has a low RDS(ON) of 850mΩ at VGS=10V, ensuring reduced conduction losses, while its continuous leakage current (ID) rating of 5A makes it suitable for medium power switching applications.
The KF4N20LD-VB is a high-voltage unipolar N-channel MOSFET that uses advanced Trench technology and is designed to operate efficiently under high voltage conditions. The MOSFET is packaged in a TO-252 package and supports drain-source voltages (VDS) up to 200V and gate-source voltages (VGS) of ±20V. Its threshold voltage (Vth) is 3V, allowing it to be easily driven by a standard gate driver. The device has a low RDS(ON) of 850mΩ at VGS=10V, ensuring reduced conduction losses, while its continuous leakage current (ID) rating of 5A makes it suitable for medium power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252, a compact surface mount package for medium power applications.
- **Configuration**: Unipolar N-channel, commonly used in various topologies for high-side or low-side switching.
- **Drain-source voltage (VDS)**: 200V, capable of handling high voltage applications.
- **Gate-source voltage (VGS)**: ±20V, providing stability for high gate-source drive voltages.
- **Threshold voltage (Vth)**: 3V, ensuring reliable switching when using common gate drive voltages.
- **On-resistance (RDS(ON))**: 850mΩ at VGS=10V, minimizing conduction losses when turned on.
- **Continuous leakage current (ID)**: 5A, suitable for medium power needs.
- **Technology**: Trench, designed for low on-resistance and improved efficiency in high-speed switching applications.
- **Package**: TO-252, a compact surface mount package for medium power applications.
- **Configuration**: Unipolar N-channel, commonly used in various topologies for high-side or low-side switching.
- **Drain-source voltage (VDS)**: 200V, capable of handling high voltage applications.
- **Gate-source voltage (VGS)**: ±20V, providing stability for high gate-source drive voltages.
- **Threshold voltage (Vth)**: 3V, ensuring reliable switching when using common gate drive voltages.
- **On-resistance (RDS(ON))**: 850mΩ at VGS=10V, minimizing conduction losses when turned on.
- **Continuous leakage current (ID)**: 5A, suitable for medium power needs.
- **Technology**: Trench, designed for low on-resistance and improved efficiency in high-speed switching applications.
Domain and module applications：
Applications and Modules
1. **Power Circuits**:
The KF4N20LD-VB MOSFET is ideal for power circuits, including switch mode power supplies (SMPS) and flyback converters, where high voltage handling and medium current levels are required. Its high VDS rating makes it suitable for use in primary-side switches, efficiently achieving AC-DC and DC-DC power conversion.
2. **Motor Control**:
The device can be used in motor control circuits for small to medium-sized motors, such as those in industrial machinery or household appliances. The MOSFET is capable of handling voltages of 200V, allowing precise control of high-voltage motors, while its Trench technology ensures efficient energy use.
3. **Battery Management System (BMS)**:
In battery management systems, the KF4N20LD-VB can be used in circuits that require high-voltage isolation and switching, such as balancing and protection circuits in lithium-ion battery packs. Its strong voltage and current capabilities help ensure the safety and efficiency of battery systems and are suitable for electric vehicles (EVs) and energy storage systems.
4. **Lighting Systems**:
This MOSFET is ideal for high-voltage LED driver applications in lighting systems, especially in industrial and outdoor lighting where high efficiency and voltage tolerance are required. The device can effectively manage switching loads while minimizing power consumption, contributing to the overall energy efficiency of LED lighting.
1. **Power Circuits**:
The KF4N20LD-VB MOSFET is ideal for power circuits, including switch mode power supplies (SMPS) and flyback converters, where high voltage handling and medium current levels are required. Its high VDS rating makes it suitable for use in primary-side switches, efficiently achieving AC-DC and DC-DC power conversion.
2. **Motor Control**:
The device can be used in motor control circuits for small to medium-sized motors, such as those in industrial machinery or household appliances. The MOSFET is capable of handling voltages of 200V, allowing precise control of high-voltage motors, while its Trench technology ensures efficient energy use.
3. **Battery Management System (BMS)**:
In battery management systems, the KF4N20LD-VB can be used in circuits that require high-voltage isolation and switching, such as balancing and protection circuits in lithium-ion battery packs. Its strong voltage and current capabilities help ensure the safety and efficiency of battery systems and are suitable for electric vehicles (EVs) and energy storage systems.
4. **Lighting Systems**:
This MOSFET is ideal for high-voltage LED driver applications in lighting systems, especially in industrial and outdoor lighting where high efficiency and voltage tolerance are required. The device can effectively manage switching loads while minimizing power consumption, contributing to the overall energy efficiency of LED lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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